R. Sbiaa, H. Meng and S. N. Piramanayagam Materials with perpendicular magnetic anisotropy for magnetic random access memory physica status solidi (RRL) - Rapid Research Letters 5
In this Review, the princple of spin-transfer torque magnetic random access memory (STT-MRAM) is explained: The magnetic tunnel junction device is sandwiched between two electrodes (cross-point architecture). The writing is based on spin torque effect and the reading on tunnelling magneto-resistive effect. In contrast to field-based MRAM, STT-MRAM does not require external magnetic field. Since STT-MRAM is scalable, the transistor scales down with the device size. Materials with perpendicular magnetic anisotropy (PMA) are being investigated for their use in STT-MRAM – multilayers such as Co/Pd and Co/Pt as well as FeCoB and future candidates such as FePt.
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