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Helin Cao, Suyang Xu, Ireneusz Miotkowski, Jifa Tian, Deepak Pandey, M. Zahid Hasan and Yong P. Chen Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals physica status solidi (RRL) - Rapid Research Letters 7

Article first published online: 6 DEC 2012 | DOI: 10.1002/pssr.201206457

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The structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals were studied. Angle resolved photoemission spectroscopy revealed the existence of topological surface states. Transport measurements showed that conduction was dominated by bulk carriers and confirmed a previously observed bulk quantum Hall effect in such highly doped samples.

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