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Saptarshi Das and Joerg Appenzeller Screening and interlayer coupling in multilayer MoS2 physica status solidi (RRL) - Rapid Research Letters 7

Version of Record online: 6 MAR 2013 | DOI: 10.1002/pssr.201307015

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The authors present the first comprehensive experimental study on the dependence of carrier mobility on the layer thickness of multilayer MoS2 field-effect transistors. They also propose a theoretical model based on Thomas–Fermi charge screening and interlayer coupling in order to explain their findings. Their model is extremely generic and can be applied to any two-dimensional layered system.

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