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R. R. LaPierre, A. C. E. Chia, S. J. Gibson, C. M. Haapamaki, J. Boulanger, R. Yee, P. Kuyanov, J. Zhang, N. Tajik, N. Jewell and K. M. A. Rahman III–V nanowire photovoltaics: Review of design for high efficiency physica status solidi (RRL) - Rapid Research Letters 7

Version of Record online: 11 APR 2013 | DOI: 10.1002/pssr.201307109

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Part of Focus Issue on “Semiconductor Nanowires” (Eds.: Chennupati Jagadish, Lutz Geelhaar, Silvija Gradecak)

To overcome the limitations of current III–V multi-junction solar photovoltaic (PV) cells, III–V nanowire-based PV is being aggressively pursued by numerous groups. This article provides a comprehensive review of nanowire-based PV covering all aspects of design for high power conversion efficiency including nanowire growth methods, growth direction, crystal structure, optical absorption, carrier collection, strain accommodation, tunnel junctions, Ohmic contact formation, passivation and doping.

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