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Saumitra Mehrotra, Pengyu Long, Michael Povolotskyi and Gerhard Klimeck Atomistic simulation of phonon and alloy limited hole mobility in Si1–xGex nanowires physica status solidi (RRL) - Rapid Research Letters 7

Version of Record online: 14 MAY 2013 | DOI: 10.1002/pssr.201307124

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Part of Focus Issue on “Semiconductor Nanowires” (Eds.: Chennupati Jagadish, Lutz Geelhaar, Silvija Gradecak)

SiGe is an important material for high mobility p-type transistors. In this Letter, the role of alloy and phonon scattering on the total hole mobility in SiGe nanowires is studied. At low carrier density, alloy scattering is still found to be relevant leading to an ‘U’ shaped mobility curve as a function of Ge concentration.

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