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Alberto Casadei, Jil Schwender, Eleonora Russo-Averchi, Daniel Rüffer, Martin Heiss, Esther Alarcó-Lladó, Fauzia Jabeen, Mohammad Ramezani, Kornelius Nielsch and Anna Fontcuberta i Morral Electrical transport in C-doped GaAs nanowires: surface effects physica status solidi (RRL) - Rapid Research Letters 7

Version of Record online: 24 MAY 2013 | DOI: 10.1002/pssr.201307162

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Part of Focus Issue on “Semiconductor Nanowires” (Eds.: Chennupati Jagadish, Lutz Geelhaar, Silvija Gradecak)

The resistivity and mobility of carbon-doped GaAs nanowires are studied for different doping concentrations. Surface effects have been evaluated by comparing unpassivated with passivated nanowires. At low doping concentrations the highest mobility is observed for unpassivated nanowires, while at higher doping concentrations the passivated nanowires offer the best characteristics. Electron beam induced current measurements show that the minority carrier diffusion path can be as high as 190 nm for passivated nanowires.

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