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Sung Sakong, Yaojun A. Du and Peter Kratzer Interface defects and impurities at the growth zone of Au-catalyzed GaAs nanowire from first principles physica status solidi (RRL) - Rapid Research Letters 7

Version of Record online: 3 JUL 2013 | DOI: 10.1002/pssr.201307210

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Part of Focus Issue on “Semiconductor Nanowires” (Eds.: Chennupati Jagadish, Lutz Geelhaar, Silvija Gradecak)

The energetics of defects and impurities at the interfaces of a Au-catalyzed GaAs nanowire can demonstrate the stability of the ideal atomic models. Based on the energetics, the interface defects and impurities are compared to their bulk species. This comparison provides the basic understandings of nanowire growth and material supply toward the interface.

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