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Torsten Rieger, Detlev Grützmacher and Mihail Ion Lepsa Si substrate preparation for the VS and VLS growth of InAs nanowires physica status solidi (RRL) - Rapid Research Letters 7

Article first published online: 22 JUL 2013 | DOI: 10.1002/pssr.201307229

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Part of Focus Issue on “Semiconductor Nanowires” (Eds.: Chennupati Jagadish, Lutz Geelhaar, Silvija Gradecak)

The authors report on simple ways to prepare Si(111) substrates for the growth of both droplet-free and In droplet-assisted InAs nanowires. Essential aspects of the growth of self-catalyzed InAs nanowires on GaAs(111) B are used to transfer the process on Si(111). Their findings are important for the integration of potential nanowire electronic devices on the cost-effective Si platform.

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