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Roman Anufriev, Nicolas Chauvin, Hammadi Khmissi, Khalid Naji, Gilles Patriarche, Michel Gendry and Catherine Bru-Chevallier Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates physica status solidi (RRL) - Rapid Research Letters 7

Article first published online: 8 JUL 2013 | DOI: 10.1002/pssr.201307242

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Part of Focus Issue on “Semiconductor Nanowires” (Eds.: Chennupati Jagadish, Lutz Geelhaar, Silvija Gradecak)

The quantum efficiency of InAs/InP nanowire heterostructures grown on silicon, such as quantum rod and quantum well nanowires, is studied as a function of excitation power. The experimental results are compared to that measured on analogues InAs(P)/InP planar heterostructures (quantum dashes and quantum well). From the obtained results we conclude about possible ways to improve the quantum efficiency of the nanowire heterostructures which can serve for the fabrication of high-efficiency light emitting devices working in telecommunication window.

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