Andreas Biermanns, Dina Carbone, Steffen Breuer, Vincent L. R. Jacques, Tobias Schulli, Lutz Geelhaar and Ullrich Pietsch Distribution of zinc-blende twins and wurtzite segments in GaAs nanowires probed by X-ray nanodiffraction physica status solidi (RRL) - Rapid Research Letters 7
Part of Focus Issue on “Semiconductor Nanowires” (Eds.: Chennupati Jagadish, Lutz Geelhaar, Silvija Gradecak)
To study and compare a large number of nanowires is challenging but frequently desired in order to determine the structural fluctuations caused by the random nature of the growth process. Biermanns et al. have used a novel diffraction scheme employing a nanofocussed X-ray beam to study a large ensemble of GaAs nanowires grown on Si(111) by molecular beam epitaxy and determine their individual structural composition.
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