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Roman Bansen, Jan Schmidtbauer, Uta Juda, Toni Markurt, Thomas Teubner, Robert Heimburger and Torsten Boeck Influence of surface roughness on Ge nanowire growth by MBE physica status solidi (RRL) - Rapid Research Letters 7

Version of Record online: 6 AUG 2013 | DOI: 10.1002/pssr.201307248

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Part of Focus Issue on “Semiconductor Nanowires” (Eds.: Chennupati Jagadish, Lutz Geelhaar, Silvija Gradecak)

Substantial variations in Ge nanowire growth by MBE are found, although nominally identical substrates were used. To investigate this, wafers polished with different polishing cloths are studied. Differences in surface roughness are found, which influence the nucleation of catalyst droplets. It is shown that even minor surface irregularities from chemical-mechanical polishing on otherwise atomically flat substrates can have a paramount influence on the nanowire growth.

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