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Karine Hestroffer and Bruno Daudin A RHEED investigation of self-assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer physica status solidi (RRL) - Rapid Research Letters 7

Version of Record online: 5 JUL 2013 | DOI: 10.1002/pssr.201307255

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Part of Focus Issue on “Semiconductor Nanowires” (Eds.: Chennupati Jagadish, Lutz Geelhaar, Silvija Gradecak)

By measuring the appearance of diffraction spots in the RHEED pattern, the nucleation time of GaN nanowires on Si(111) covered (or not) with an AlN thin buffer layer has been monitored. Consistent with a standard nucleation model, this nucleation time depends on the Ga adatom density on the substrate, which depends itself on Ga flux and/or substrate temperature.

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