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A. Pierret, C. Bougerol, M. den Hertog, B. Gayral, M. Kociak, H. Renevier and B. Daudin Structural and optical properties of Alx Ga1–xN nanowires physica status solidi (RRL) - Rapid Research Letters 7

Version of Record online: 23 JUL 2013 | DOI: 10.1002/pssr.201308009

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Part of Focus Issue on “Semiconductor Nanowires” (Eds.: Chennupati Jagadish, Lutz Geelhaar, Silvija Gradecak)

AlxGa1-x nanowires exhibit a remarkable compositional variability, associated with the statistical incorporation of Al and Ga species. Although such alloy composition fluctuations are also observed in two-dimensional layers, and usually assigned to the presence of extended defects, the situation is drastically different in the case of defect-free nanowires, emphasizing the dominant role of kinetics. Nanocathodoluminescence mapping of single nanowires has revealed the presence of sharp emission lines, as an evidence of localization effects assigned to composition fluctuations, leading to a quantum dot-like behaviour.

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