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A. R. Ullah, H. J. Joyce, A. M. Burke, J. Wong-Leung, H. H. Tan, C. Jagadish and A. P. Micolich Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors physica status solidi (RRL) - Rapid Research Letters 7

Article first published online: 25 JUL 2013 | DOI: 10.1002/pssr.201308014

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Part of Focus Issue on “Semiconductor Nanowires” (Eds.: Chennupati Jagadish, Lutz Geelhaar, Silvija Gradecak)

The authors report the study of nanowire transistors made using phase-pure wurtzite and zincblende InAs nanowires grown from identical catalyst particles. The figure shows the peak field-effect mobility versus temperature for these devices, with a 2-4 times higher peak mobility for the wurtzite nanowires compared to the zincblende nanowires.

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