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Imad Khan and Iftikhar Ahmad Theoretical studies of the band structure and optoelectronic properties of ZnOxS1−x International Journal of Quantum Chemistry 113

Version of Record online: 16 JUL 2012 | DOI: 10.1002/qua.24277

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ZnO and ZnS are direct bandgap semiconductors, and their wide gap provides high breakdown voltages and emission in the blue/near UV region of the spectrum. The optoelectronic properties of their ternary alloys, ZnO xS1−x, are simulated to verify possible applications of this material in photonic devices operating in visible to UV spectral regions. As it is found to have similar character to III[BOND]N[BOND]V, ZnO xS1−x has potential to replace these materials in optoelectronic technology.

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