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Zhong-tang Xu, Kui-juan Jin, Lin Gu, Yu-ling Jin, Chen Ge, Can Wang, Hai-zhong Guo, Hui-bin Lu, Rui-qiang Zhao and Guo-zhen Yang Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories Small 8

Article first published online: 20 FEB 2012 | DOI: 10.1002/smll.201101796

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The aberration-corrected annular-bright-field imaging technique is employed to directly observe oxygen vacancies in LaMnO3 (LMO) films fabricated under various oxygen pressures. In combination with a numerical model, it is confirmed that the migration of oxygen vacancies at the Pt/LMO interface in Pt/LMO/SrTiO3:Nb (SNTO) devices dominates the resistive switching characteristics.

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