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Chanyoung Yim, Niall McEvoy, Ehsan Rezvani, Shishir Kumar and Georg S. Duesberg Carbon–Silicon Schottky Barrier Diodes Small 8

Version of Record online: 5 MAR 2012 | DOI: 10.1002/smll.201101996

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The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained. These remarkable values, which are not far away from those of commercial products are obtained repeatedly on non-optimized substrates with fully scalable processes.

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