Chanyoung Yim, Niall McEvoy, Ehsan Rezvani, Shishir Kumar and Georg S. Duesberg Carbon–Silicon Schottky Barrier Diodes Small 8
The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained. These remarkable values, which are not far away from those of commercial products are obtained repeatedly on non-optimized substrates with fully scalable processes.
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