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Hua Xu, Yabin Chen, Jin Zhang and Haoli Zhang Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on SiO2 Substrates using Raman Spectroscopy Small 8

Version of Record online: 8 JUN 2012 | DOI: 10.1002/smll.201102468

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Electrochemical doping of the O2/H2O redox couple to graphene occurring at the interface of graphene/SiO2 substrate is proven responsible for the origin of the hysteresis effect in graphene electrical field transistors. Marcus–Gerischer theory is used to explain the charge-transfer mechanism between the O2/H2O redox couple and graphene, and to analyze their dynamic equilibrium process under electrical field effect.

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