Chong Guan Low and Qing Zhang Ultra-thin and Flat Mica as Gate Dielectric Layers Small 8
Ultra-thin and flat mica-based carbon nanotube field-effect transistors reveal the excellent gate control capability and low leakage current due to the high dielectric constant and high dielectric strength of ultra-thin mica as the gate dielectric. Subthreshold swing of 110 mV/dec and carrier mobility improvement are achieved. The ultra-thin mica retains its surface flatness, indicating the potential application for low-dimensional materials in which surface roughness scattering is significant.
Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf