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Xiao Yu, Yuchen Wang, Hong Zhou, Yanxiang Liu, Yi Wang, Tie Li and Yuelin Wang Top-Down Fabricated Silicon-Nanowire-Based Field-Effect Transistor Device on a (111) Silicon Wafer Small 9

Version of Record online: 12 NOV 2012 | DOI: 10.1002/smll.201201599

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The unique anisotropic wet-etching mechanism of a (111) silicon wafer facilitates the highly controllable top-down fabrication of silicon nanowires (SiNWs) with conventional microfabrication technology. The fabrication process is compatible with the surface manufacturing technique, which is employed to build a nanowire-based field-effect transistor structure on the fabricated SiNW.

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