E-mail a Wiley Online Library Link

Zongyou Yin, Zhiyuan Zeng, Juqing Liu, Qiyuan He, Peng Chen and Hua Zhang Memory Devices Using a Mixture of MoS2 and Graphene Oxide as the Active Layer Small 9

Version of Record online: 19 NOV 2012 | DOI: 10.1002/smll.201201940

Thumbnail image of graphical abstract

A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈102).

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field