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Jie Meng, Han-Chun Wu, Jing-Jing Chen, Fang Lin, Ya-Qing Bie, Igor V. Shvets, Da-Peng Yu and Zhi-Min Liao Ultraviolet Irradiation-Controlled Memory Effect in Graphene Field-Effect Transistors Small 9

Version of Record online: 11 FEB 2013 | DOI: 10.1002/smll.201202947

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Control of graphene memory devices using photons, via control of the charge-transfer process, is demonstrated by employing gate-voltage pulses to program/erase the memory elements. The hysteresis in the conductance-gate voltage-dependence of graphene field-effect transistors on a SiO2 substrate can be greatly enlarged by ultraviolet irradiation in both air and vacuum. An enhanced charge transfer between graphene and its surroundings, induced by ultraviolet illumination, is proposed.

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