Jinying Wang, Ruiqi Zhao, Zhongfan Liu and Zhirong Liu Widely Tunable Carrier Mobility of Boron Nitride-Embedded Graphene Small 9
The intrinsic carrier mobility of boron nitride-embedded graphene (BNG) is investigated under a phonon scattering mechanism. The mobility increases with carbon content and is tunable from 103 to 105 cm2 V−1 s−1 when the bandgap is between 0.38 and 1.39 eV. Some BNG materials even show ultrahigh mobility comparable to that of graphene. BNG is thus a promising material for electronic devices.
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