Beom Joon Kim, Yongmin Ko, Jeong Ho Cho and Jinhan Cho Organic Field-Effect Transistor Memory Devices Using Discrete Ferritin Nanoparticle-Based Gate Dielectrics Small 9
A novel type of transistor memory device is prepared using protein multilayers. These devices display reversible shifts in the threshold voltage as a function of charge trapping and detrapping in the protein gate dielectric layers. This approach is extended to the preparation of flexible transistor memory devices that require low operating voltages and have reliable electrical and mechanical stability.
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