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Angewandte Chemie International Edition

Solution-Processed Reduced Graphene Oxide Films as Electronic Contacts for Molecular Monolayer Junctions

Authors

  • Dr. Sohyeon Seo,

    1. National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea)
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  • Misook Min,

    1. National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea)
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  • Dr. Junghyun Lee,

    1. National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea)
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  • Dr. Takhee Lee,

    1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju (Korea)
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  • Dr. Sung-Yool Choi,

    1. Electronics and Telecommunications Research Institute (ETRI), Daejeon (Korea)
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  • Dr. Hyoyoung Lee

    Corresponding author
    1. National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea)
    • National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea)
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  • This work was supported by the Creative Research Initiatives (project title: Smart Molecular Memory) of MEST/NRF.

Abstract

Reduction to the essential: A highly conductive and soft carbon interlayer of reduced graphene oxide (rGO) prevents the formation of a filamentary current path, achieving both high yield and true molecular effects in monolayer-based molecular devices. Junctions of the rGO interlayer contacts with molecular monolayers elucidate the molecularly resolved electronic properties of molecular resistors and nonvolatile memories.

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