Chapter 9.2 Layer stacking

Mathematical, physical and chemical tables

First Online Edition (2006)

Part 9. Basic structural features

  1. S. Ďurovič1,
  2. P. Krishna2,
  3. D. Pandey3

Published Online: 1 JAN 2006

DOI: 10.1107/97809553602060000618

International Tables for Crystallography

International Tables for Crystallography

How to Cite

Ďurovič, S., Krishna, P. and Pandey, D. 2006. Layer stacking. International Tables for Crystallography. C:9:9.2:752–773.

Author Information

  1. 1

    Department of Theoretical Chemistry, Slovak Academy of Sciences, Dúbravská cesta, 842 36 Bratislava, Slovakia

  2. 2

    Rajghat Education Center, Krishnamurti Foundation India, Rajghat Fort, Varanasi 221001, India

  3. 3

    Physics Department, Banaras Hindu University, Varanasi 221005, India

Publication History

  1. Published Online: 1 JAN 2006



The first section of this chapter describes layer stacking in close‐packed structures. The structures of SiC and ZnS, CdI2 and GaSe are used as examples. Stacking faults, voids in structures and disorder are discussed. Layer stacking in general polytypic structures is described in the second section of the chapter. The notion of polytypism is explained and symmetry aspects of polytypism are considered. Three examples illustrating the three main methods of analysis of polytypism are given.


  • basic structural features;
  • cadmium iodide;
  • circle packings;
  • close‐packed structures;
  • desymmetrization;
  • gallium selenide;
  • inorganic compounds;
  • lattices;
  • layer stacking;
  • maximum degree of order polytypes;
  • mercury sulfide chloride;
  • notations for close‐packed structures;
  • order–disorder;
  • packing;
  • phyllosilicates;
  • polytypes;
  • polytypism;
  • space groups;
  • spheres;
  • stacking sequence;
  • stibivanite;
  • trimercury dichloride disulfide;
  • vicinity condition;
  • voids in close‐packed structures;
  • zinc sulfide