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Advanced Materials
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor-in-Chief: Peter Gregory, Deputy Editors: David Flanagan, Martin Ottmar
Online ISSN: 1521-4095
Associated Title(s): Advanced Energy Materials, Advanced Engineering Materials, Advanced Functional Materials, Advanced Healthcare Materials, Small
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Current Issue:February 21, 2012
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Recently Published Articles
- A Graphite-Like Zero Gap Semiconductor with an Interlayer Separation of 2.8 Å
Moni Baskey and Shyamal K Saha
Article first published online: 23 FEB 2012 | DOI: 10.1002/adma.201104717
The synthesis of a highly crystalline graphite-like new material with an interlayer separation of 2.8 Å is demonstrated by re-stacking GO sheets in the form of a thin film. The optical absorption spectra and electrical data indicate that the new crystal phase is an indirect zero gap semiconductor.
- Creation of Nanostuctures by Extreme Conditions: High-Pressure Synthesis of Ultrahard Nanocrystalline Cubic Boron Nitride
Vladimir L. Solozhenko, Oleksandr O. Kurakevych and Yann Le Godec
Article first published online: 23 FEB 2012 | DOI: 10.1002/adma.201104361
The synthesis of high-purity bulk nanostructured cubic boron nitride (cBN) at 20 GPa and 1770 K by direct phase transformation of graphite-like BN with an “ideal random layer” structure is reported. The two-times increase of hardness of nano-cBN (HV = 85 GPa) with respect to conventional polycrystalline cBN (HV ∼ 45 GPa) is evidently a result of nanosize effects.
- Unraveling the Mechanism of Molecular Doping in Organic Semiconductors
Alexander Mityashin, Yoann Olivier, Tanguy Van Regemorter, Cedric Rolin, Stijn Verlaak, Nicolas G. Martinelli, David Beljonne, Jérôme Cornil, Jan Genoe and Paul Heremans
Article first published online: 23 FEB 2012 | DOI: 10.1002/adma.201104269
The mechanism by which molecular dopants donate free charge carriers to the host organic semiconductor is investigated and is found to be quite different from the one in inorganic semiconductors. In organics, a strong correlation between the doping concentration and its charge donation efficiency is demonstrated. Moreover, there is a threshold doping level below which doping simply has no electrical effect.
