International Journal of Circuit Theory and Applications
© John Wiley & Sons Ltd
Edited By: Ángel Rodríguez-Vázquez
Impact Factor: 1.179
ISI Journal Citation Reports © Ranking: 2015: 138/257 (Engineering Electrical & Electronic)
Online ISSN: 1097-007X
About International Journal of Circuit Theory and Applications
The International Journal of Circuit Theory and Applications is devoted to the publication of original work on both the theory and its applications. It brings together papers describing advances in the theory and in the application of circuit theoretic concepts intendeds to be of interest both in stimulating the wider use of such concepts and in posing new challenges for the circuit theorist.
Recently Published Articles
- Design and FPGA implementation of multiplierless comb filter
Richa Barsainya, Meenakshi Agarwal and Tarun Kumar Rawat
Version of Record online: 24 FEB 2017 | DOI: 10.1002/cta.2324
In this paper, minimum multiplier comb filter is realized using the concept of lattice wave digital filters. The realized comb filter is further implemented on FPGA in multiplier-less manner. The performance analysis of proposed comb filter is carried out in terms of hardware utilization, maximum sampling frequency, and power dissipation.
- Realization of a transfer function as a passive two-port RC ladder network with a specified gain
Kai Wang, Michael Z. Q. Chen and Guanrong Chen
Version of Record online: 23 FEB 2017 | DOI: 10.1002/cta.2328
This paper is concerned with the realization problem of a class of transfer functions as a two-port RC ladder network with a specified gain. The realization problems of a class of low-pass transfer functions and a class of high-pass transfer functions as two-port RC ladder configurations are investigated, the actual gain of which can be adjusted to the specified value of the function based on the congruent transformation. As a consequence, utilizing the cascade realization approach, it is shown that any transfer function of this class can be realized as a two-port RC ladder network with any specified gain in a continuous interval.
- Minimal two-transistor multifunction filter design
Brent J. Maundy, Ahmed S. Elwakil, Serdar Ozoguz and Hacer A. Yildiz
Version of Record online: 21 FEB 2017 | DOI: 10.1002/cta.2319
This paper presents a comprehensive method and analysis in the design of two-transistor multi-output filters where three possible functions are simultaneously available. Although two transistors are employed at its core, proper biasing does not require additional passive components. A total of 13 valid second-order filters are reported and several of them are experimentally tested using discrete transistors as well as simulated using Spectre in a BiCMOS process. A fully differential realization of a MOS-C band-pass filter, based on one of the structures found, is designed and then used to realize a fourth-order Chebyshev band-pass filter.
- A power efficient buck-boost converter by reusing the coil inductor for wireless bio-implants
Mahdi Barati and Mohammad Yavari
Version of Record online: 6 FEB 2017 | DOI: 10.1002/cta.2320
In this paper, a buck-boost converter for power transfer via inductive links in bio-implantable systems is presented. There is a large inductor in the structure of the buck-boost converters. Reusing the inherent inductor of the power receiver coil resolves the need for a new large off-chip inductor in the converter. Furthermore, in the proposed technique, the regulator efficiency becomes almost independent of the coil receiving voltage amplitude, which is a big challenge in wireless power transfer via inductive links. By adding just five switches and a control circuit to the power receiver coil and the rectifier, a very small buck-boost converter is achieved, which make it suitable for bio-implant applications.
- A 1.9-GHz silicon-on-insulator CMOS stacked-FET power amplifier with uniformly distributed voltage stresses
Donggu Im, Kuduck Kwon and In-Young Lee
Version of Record online: 3 FEB 2017 | DOI: 10.1002/cta.2325
A 1.9-GHz single-stage differential stacked-FET power amplifier with uniformly distributed voltage stresses was implemented using 0.32-μm 2.8-V thick-oxide MOSFETs in a 0.18-μm silicon-on-insulator CMOS process. The input cross-coupled stacked-FET topology was proposed to evenly distribute the voltage stresses among the stacked transistors, alleviating the breakdown and reliability issues of the stacked-FET power amplifier in sub-micrometer CMOS technology. With a 4-V supply voltage, the proposed power amplifier with an integrated output coupled-resonator balun showed a small-signal gain of 17 dB, a saturated output power of 26.1 dBm, and a maximum power-added efficiency of 41.5% at the operating frequency.