European Journal of Inorganic Chemistry

Cover image for Vol. 2014 Issue 27

Editor: Karen Hindson, Deputy Editor: Preeti Vashi

Impact Factor: 2.965

ISI Journal Citation Reports © Ranking: 2013: 10/44 (Chemistry Inorganic & Nuclear)

Online ISSN: 1099-0682

Associated Title(s): Angewandte Chemie International Edition, Chemistry - A European Journal, Chemistry – An Asian Journal, ChemistryOpen, ChemCatChem, Zeitschrift für anorganische und allgemeine Chemie

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Growing Gallium Nitride Crystals - Understanding the ammonothermal method for growing GaN crystals

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Growing Gallium Nitride Crystals

Understanding the ammonothermal method for growing GaN crystals.
Gallium nitride (GaN) is an important material for the semiconductor industry. It features a wide band gap and high thermal conductivity at room temperature, which make it a good material for optoelectronic devices and high-performance radio-frequency microdevices. In the European Journal of Inorganic Chemistry, Rainer Niewa and co-workers at the University of Stuttgart and Ludwig Maximilians University of Munich, Germany, report the existence of ammoniates of gallium halides in the ammonothermal growth of GaN and provide a rigorous characterization of these compounds.

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No.Press ReleaseOriginal Communication

02/2013

Growing Gallium Nitride Crystals
Understanding the ammonothermal method for growing GaN crystals
(PDF)

Intermediates in Ammonothermal GaN Crystal Growth under Ammonoacidic Conditions

Rainer Niewa, Universität Stuttgart (Germany)


01/2013

When Boron Butts In
Bridging N–N ligand borylation in group 4 metallocene complexes
(PDF)

Dinitrogen Borylation with Group 4 Metallocene Complexes

Paul J. Chirik, Princeton University (USA)


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