European Journal of Inorganic Chemistry

Cover image for Vol. 2014 Issue 24

Editor: Karen Hindson, Deputy Editor: Preeti Vashi

Impact Factor: 2.965

ISI Journal Citation Reports © Ranking: 2013: 10/44 (Chemistry Inorganic & Nuclear)

Online ISSN: 1099-0682

Associated Title(s): Angewandte Chemie International Edition, Chemistry - A European Journal, Chemistry – An Asian Journal, ChemistryOpen, ChemCatChem, Zeitschrift für anorganische und allgemeine Chemie

2014_24/2014Enantiopure Conducting Salts of Dimethylbis(ethylenedithio)tetrathiafulvalene (DM-BEDT-TTF) with the Hexachlororhenate(IV) Anion (Eur. J. Inorg. Chem. 24/2014)

The cover picture shows the mirror-image relationship, like that between the two hands in the background, between two enantiopure dimethylbis(ethylenedithio)tetrathiafulvalene (DM-BEDT-TTF) precursors. Also shown are the solid-state packing diagrams, represented in an artistic manner, of the mixed-valence radical cation salts of these precursors with the hexachlororhenate(IV) dianion. These paramagnetic semiconducting chiral materials have been obtained by electrocrystallization, and their transport properties were determined by single-crystal resistivity measurements, supported by band-structure calculations. The organic/inorganic segregation shown in the picture is an important prerequisite for extensive electron delocalization, although charge localization occurs here in the donors. Details are discussed in the article by N. Avarvari et al. on p. 3855 ff. For more on the story behind the cover research, see the Cover Profile.

Read Full Text  | Table of Contents

2014_24i/2014Transistor Application of Phenacene Molecules and Their Characteristics (Eur. J. Inorg. Chem. 24/2014)

The inside cover picture shows a representation of the phenacene field-effect transistor (FET). A thin film or a single crystal of the phenacene molecule is an active layer of the FET. SiO2 can be utilized as a gate dielectric, which becomes a gate capacitor in the FET. The gate voltage can be applied through the heavily doped Si substrate. In this case, the FET device can be recognized as a “top-contact/bottom-gate” structure. Furthermore, an ionic liquid such as bmim[PF6] forms the electric double layer (EDL) with a thickness of 1 nm, which becomes an effective capacitor in the FET, i. e. low-voltage operation is observed in the EDL FET. The gate voltage is applied through the gate electrode immersed in the ionic liquid. This device can be recognized as a “top-contact/top-gate” structure. A single crystal of the phenacene molecule is shown in the background. Details are presented in the Microreview by Y. Kubozono et al. on p. 3806 ff.

| Table of Contents

2014_24b/2014Pressure-Induced Metallic Conductivity in the Single-Component Molecular Crystal [Ni(dmit)2] (Eur. J. Inorg. Chem. 24/2014)

The back cover picture shows a diamond anvil cell and a mounted sample in the cell, which is the setup used for measuring the electrical conductivity of a small single-component molecular crystal of a metal–dithiolene complex, [Ni(dmit)2], under very high pressure (up to 25.8 GPa). The pressure is comparable to the lower mantle pressure (more than 600 km deep in the earth). This very high pressure changes the insulating crystal to a metal with a three-dimensional Fermi surface. Details are discussed in the Short Communication by H. Cui, R. Kato et al. on p. 3837 ff.

Read Full Text  | Table of Contents

SEARCH

SEARCH BY CITATION