International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Cover image for Vol. 27 Issue 3

Early View (Online Version of Record published before inclusion in an issue)

Edited By: Eric Michielssen

Impact Factor: 0.537

ISI Journal Citation Reports © Ranking: 2012: 76/93 (Mathematics Interdisciplinary Applications); 193/243 (Engineering Electrical & Electronic)

Online ISSN: 1099-1204

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  1. 1 - 42
  1. Research Articles

    1. Finite element method investigation of electrostatic precipitator performance

      Nouri Hamou, Aissou Massinissa, Aitsaid Hakim and Zebboudj Youcef

      Article first published online: 3 APR 2014 | DOI: 10.1002/jnm.1992

  2. Editorials

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  3. Research Articles

  4. SI - Modeling of High-Frequency Silicon Transistors

    1. Open-source circuit simulation tools for RF compact semiconductor device modelling

      Wladek Grabinski, Mike Brinson, Paolo Nenzi, Francesco Lannutti, Nikolaos Makris, Angelos Antonopoulos and Matthias Bucher

      Article first published online: 18 MAR 2014 | DOI: 10.1002/jnm.1973

  5. Research Articles

  6. SI - Modeling of High-Frequency Silicon Transistors

  7. Research Articles

    1. Modeling the memristor with piecewise linear function

      Xiaomu Mu, Juntang Yu and Shuning Wang

      Article first published online: 7 MAR 2014 | DOI: 10.1002/jnm.1987

    2. Troubleshooting in geoelectrical prospecting using real-coded genetic algorithm with chromosomal extrapolation

      Wesley Pacheco Calixto, A. Paulo Coimbra, Jesus Carlos da Mota, Marcel Wu, Wander G. da Silva, Bernardo Alvarenga, Leonardo da Cunha Brito, Aylton Jose Alves, Elder Geraldo Domingues and Daywes Pinheiro Neto

      Article first published online: 7 MAR 2014 | DOI: 10.1002/jnm.1986

  8. SI - Modeling of High-Frequency Silicon Transistors

    1. Gate leakage currents model for FinFETs implemented in Verilog-A for electronic circuits design

      Salvador I. Garduño, Joaquín Alvarado, Antonio Cerdeira, Magali Estrada, Valeriya Kilchytska and Denis Flandre

      Article first published online: 7 MAR 2014 | DOI: 10.1002/jnm.1988

  9. Special Issue Papers

    1. Gradient-based optimization techniques for the design of static controllers for Markov jump linear systems with unobservable modes

      Alessandro N. Vargas, Daiane C. Bortolin, Eduardo F. Costa and João B.R. do Val

      Article first published online: 4 MAR 2014 | DOI: 10.1002/jnm.1981

  10. Research Articles

    1. Modeling of ultra-wideband indoor channels with the modified leapfrog ADI-FDTD method

      Meng-Lin Zhai, Wen-Yan Yin, Zhizhang (David) Chen, Hong Nie and Xiang-Hua Wang

      Article first published online: 4 MAR 2014 | DOI: 10.1002/jnm.1983

  11. SI - Modeling of High-Frequency Silicon Transistors

  12. Research Articles

    1. Dynamic behavior of a distributed incinerator power system under output power variation

      Meng-Jen Chen, Yu-Chi Wu, Guo-Tsair Liu and Jong-Fang Chen

      Article first published online: 4 MAR 2014 | DOI: 10.1002/jnm.1984

  13. SI - Modeling of High-Frequency Silicon Transistors

    1. Modeling of high-frequency noise of silicon CMOS transistors for RFIC design

      Angelos Antonopoulos, Matthias Bucher, Kostas Papathanasiou, Nikolaos Makris, Nikolaos Mavredakis, Rupendra Kumar Sharma, Paulius Sakalas and Michael Schroter

      Article first published online: 25 FEB 2014 | DOI: 10.1002/jnm.1959

  14. Research Articles

  15. SI - Modeling of High-Frequency Silicon Transistors

    1. Unified current modeling in low-dimensional MOSFETs

      Ahcene Lakhlef, Arezki Benfdila, Mohamed Goudjil and Rabah Mokdad

      Article first published online: 24 FEB 2014 | DOI: 10.1002/jnm.1976

  16. Research Articles

  17. Call for Papers

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    2. You have free access to this content
  18. SI - Modeling of High-Frequency Silicon Transistors

    1. Microwave neural modeling for silicon FinFET varactors

      Zlatica Marinković, Giovanni Crupi, Dominique M. M.-P. Schreurs, Alina Caddemi and Vera Marković

      Article first published online: 29 JAN 2014 | DOI: 10.1002/jnm.1926

    2. The correct account of nonzero differential conductance in the saturation regime in the MOSFET compact model

      Valentin Turin, Gennady Zebrev, Sergey Makarov, Benjamin Iñiguez and Michael Shur

      Article first published online: 29 JAN 2014 | DOI: 10.1002/jnm.1969

    3. Generic high-frequency small-signal look-up table model extraction for Si–Ge heterojunction bipolar transistors

      Seyed Majid Homayouni, Bart Nauwelaers and Dominique M. M.-P. Schreurs

      Article first published online: 28 JAN 2014 | DOI: 10.1002/jnm.1975

  19. Research Articles

    1. A 2-D surface-potential-based threshold voltage model for short channel asymmetric heavily doped DG MOSFETs

      Pradipta Dutta, Binit Syamal, Nagarajan Mohankumar and Chandan Kumar Sarkar

      Article first published online: 17 JAN 2014 | DOI: 10.1002/jnm.1971

    2. Modeling of MESFET in SPICE including self-heating

      Damian Bisewski and Janusz Zarębski

      Article first published online: 8 JAN 2014 | DOI: 10.1002/jnm.1974

  20. SI - Modeling of High-Frequency Silicon Transistors

    1. RF and broadband noise investigation in High-k/Metal Gate 28-nm CMOS bulk transistor

      F. Danneville, L. Poulain, Y. Tagro, S. Lepilliet, B. Dormieu, D. Gloria, P. Scheer and G. Dambrine

      Article first published online: 6 JAN 2014 | DOI: 10.1002/jnm.1972

  21. Research Articles

  22. SI - Modeling of High-Frequency Silicon Transistors

    1. A surface-potential-based MOSFET compact model accounting for random doping fluctuations

      S. Donati Guerrieri, Federica Cappelluti, Fabrizio Bonani and Giovanni Ghione

      Article first published online: 17 DEC 2013 | DOI: 10.1002/jnm.1958

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    3. Nonlinear modeling of LDMOS transistors for high-power FM transmitters

      Gianni Bosi, Giovanni Crupi, Valeria Vadalà, Antonio Raffo, Antonello Giovannelli and Giorgio Vannini

      Article first published online: 30 SEP 2013 | DOI: 10.1002/jnm.1939

  23. Research Articles

  24. SI - Modeling of High-Frequency Silicon Transistors

    1. Polynomial noise modeling of silicon-based GaN HEMTs

      Sergio Colangeli, Andrea Bentini, Walter Ciccognani and Ernesto Limiti

      Article first published online: 24 MAY 2013 | DOI: 10.1002/jnm.1907

  25. Research Articles

    1. Commutation modelling and sparks reduction based on coupled circuit method

      Mounia Samira Kelaiaia, Hocine Labar, Kamel Bounaya, Samia Kelaiaia and Tarek Mesbah

      Article first published online: 30 MAY 2012 | DOI: 10.1002/jnm.1845

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