International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Cover image for Vol. 29 Issue 5

Early View (Online Version of Record published before inclusion in an issue)

Edited By: Eric Michielssen

Impact Factor: 0.515

ISI Journal Citation Reports © Ranking: 2015: 86/101 (Mathematics Interdisciplinary Applications); 211/255 (Engineering Electrical & Electronic)

Online ISSN: 1099-1204

VIEW

  1. 1 - 54
  1. Research Articles

    1. Metamaterial characterization by applying different boundary conditions on triangular split ring resonator type metamaterials

      Mehmet Bakır, Muharrem Karaaslan, Furkan Dincer and Cumali Sabah

      Version of Record online: 25 AUG 2016 | DOI: 10.1002/jnm.2188

    2. Accurate modeling of pHEMT output current derivatives over a wide temperature range

      Yuan-Yuan Zhu, Jian-Guo Ma, Hai-Peng Fu, Qi-Jun Zhang, Qian-Fu Cheng and Qian Lin

      Version of Record online: 25 AUG 2016 | DOI: 10.1002/jnm.2185

    3. Modelling of wireless power transfer links based on capacitive coupling

      Marco Dionigi, Mauro Mongiardo, Giuseppina Monti and Renzo Perfetti

      Version of Record online: 18 AUG 2016 | DOI: 10.1002/jnm.2187

    4. Effect of gate-length downscaling on the analog/RF and linearity performance of InAs-based nanowire tunnel FET

      Biswajit Baral, Sudhansu Mohan Biswal, Debashis De and Angsuman Sarkar

      Version of Record online: 15 AUG 2016 | DOI: 10.1002/jnm.2186

    5. Numerical analysis of a circular chalcogenide/silica hybrid nanostructured photonic crystal fiber for the purpose of dispersion compensation

      Rahim Karami, Mahmood Seifouri, Saeed Olyaee, Mohammad Chitsazian and Mohammad Reza Alizadeh

      Version of Record online: 14 AUG 2016 | DOI: 10.1002/jnm.2184

    6. Isogeometric analysis with trimming technique for quadruple arch-cut ridged circle waveguide

      Peng Li, Jun Liu, Gao Lin, Shan Lu and Pengchong Zhang

      Version of Record online: 14 JUL 2016 | DOI: 10.1002/jnm.2182

    7. A flexible memristive model with simplex basis function

      Juntang Yu, Xiangming Xi and Shuning Wang

      Version of Record online: 14 JUL 2016 | DOI: 10.1002/jnm.2183

    8. An improved model for substrate in RF SOI MOSFET varactor

      Wenjun Li, Xiaochuan Chen and Jun Liu

      Version of Record online: 7 JUL 2016 | DOI: 10.1002/jnm.2179

    9. Data-sparse numerical models for SNOM tips

      Christian Hafner, Ralf Hiptmair and Pegah Souzangar

      Version of Record online: 24 JUN 2016 | DOI: 10.1002/jnm.2178

  2. Linear and Nonlinear Modelling of GAN Transistors and Circuits

    1. A novel approach for the modeling of HEMT high power device

      Lei Sang, Xiangxiang Li, Wen Huang, Jincheng Rui and Dongwei Pang

      Version of Record online: 6 JUN 2016 | DOI: 10.1002/jnm.2172

  3. Research Articles

    1. Numerical simulation and a parametric study of inorganic nanowire solar cells

      Nouran M. Ali, Ashraf M. Abdel Haleem, Nageh K. Allam and Nadia H. Rafat

      Version of Record online: 2 JUN 2016 | DOI: 10.1002/jnm.2176

    2. A 1D numerical model for rapid stress analysis in bipolar junction transistors

      Parameshwaran Gnanachchelvi, Bogdan M. Wilamowski, Richard C. Jaeger, Safina Hussain, Jeffrey C. Suhling and Michael C. Hamilton

      Version of Record online: 27 MAY 2016 | DOI: 10.1002/jnm.2177

  4. Linear and Nonlinear Modelling of GAN Transistors and Circuits

    1. A novel nonlinear large-signal statistical model of GaN HEMT used in S-band power amplifier design and yield estimation

      Zhikai Chen, Yuehang Xu, Changsi Wang, Zhang Wen, Chuicai Rong and Ruimin Xu

      Version of Record online: 22 MAR 2016 | DOI: 10.1002/jnm.2165

  5. Research Articles

    1. Analytical modeling of Junctionless Accumulation Mode Cylindrical Surrounding Gate MOSFET (JAM-CSG)

      Nitin Trivedi, Manoj Kumar, Subhasis Haldar, S.S Deswal, Mridula Gupta and R. S. Gupta

      Version of Record online: 21 MAR 2016 | DOI: 10.1002/jnm.2162

  6. Linear and Nonlinear Modelling of GAN Transistors and Circuits

    1. A procedure for the extraction of a nonlinear microwave GaN FET model

      Gustavo Avolio, Valeria Vadalà, Iltcho Angelov, Antonio Raffo, Mauro Marchetti, Giorgio Vannini and Dominique Schreurs

      Version of Record online: 21 MAR 2016 | DOI: 10.1002/jnm.2151

  7. Advances in Simulation-Driven Modelling and Optimization of Microwave-RF Circuits

  8. Research Articles

  9. Linear and Nonlinear Modelling of GAN Transistors and Circuits

    1. On the design of GaN Chireix power amplifiers using an embedding device model

      Patrick Roblin, Hsiu-Chen Chang, Francisco J. Martinez-Rodriguez, Chenggang Xie and Jose I. Martinez-Lopez

      Version of Record online: 16 FEB 2016 | DOI: 10.1002/jnm.2148

  10. Advances in Simulation-Driven Modelling and Optimization of Microwave-RF Circuits

  11. Linear and Nonlinear Modelling of GAN Transistors and Circuits

    1. An improved linear modeling technique with sensitivity analysis for GaN HEMT

      Danting Luo, Li Shen and Jianjun Gao

      Version of Record online: 5 JAN 2016 | DOI: 10.1002/jnm.2139

    2. Wave approach for noise modeling of gallium nitride high electron-mobility transistors

      Vladica Đorđević, Zlatica Marinković, Giovanni Crupi, Olivera Pronić-Rančić, Vera Marković and Alina Caddemi

      Version of Record online: 21 DEC 2015 | DOI: 10.1002/jnm.2138

    3. A parameter extraction method for GaN HEMT empirical large-signal model including self-heating and trapping effects

      Zhang Wen, Yuehang Xu, Changsi Wang, Xiaodong Zhao, Zhikai Chen and Ruimin Xu

      Version of Record online: 21 DEC 2015 | DOI: 10.1002/jnm.2137

  12. Advances in Simulation-Driven Modelling and Optimization of Microwave-RF Circuits

    1. Adjoint sensitivity analysis of the T, Π, and L types of microstripline low noise amplifiers

      Salih Demirel, Filiz Güneş and Peyman Mahouti

      Version of Record online: 13 DEC 2015 | DOI: 10.1002/jnm.2133

  13. Linear and Nonlinear Modelling of GAN Transistors and Circuits

    1. Optimization-based approach for scalable small-signal and noise model extraction of GaN-on-SiC HEMTs

      Sergio Colangeli, Walter Ciccognani, Riccardo Cleriti, Mirko Palomba and Ernesto Limiti

      Version of Record online: 8 DEC 2015 | DOI: 10.1002/jnm.2135

  14. Advances in Simulation-Driven Modelling and Optimization of Microwave-RF Circuits

  15. Linear and Nonlinear Modelling of GAN Transistors and Circuits

    1. Design of Ku-band GaN HEMT power amplifier based on multi-bias statistical model

      Zhikai Chen, Yuehang Xu, Changsi Wang, Zhang Wen and Ruimin Xu

      Version of Record online: 1 DEC 2015 | DOI: 10.1002/jnm.2130

    2. An efficient parameter extraction method for GaN HEMT small-signal equivalent circuit model

      Zhang Wen, Yuehang Xu, Changsi Wang, Xiaodong Zhao and Ruimin Xu

      Version of Record online: 1 DEC 2015 | DOI: 10.1002/jnm.2127

    3. Trapping behavior of GaN HEMTs and its implications on class B PA bias point selection

      Pedro M. Cabral, Luis C. Nunes, Tiago Ressurreição and José C. Pedro

      Version of Record online: 26 NOV 2015 | DOI: 10.1002/jnm.2128

    4. Empowering GaN HEMT models: The gateway for power amplifier design

      Giovanni Crupi, Valeria Vadalà, Paolo Colantonio, Elisa Cipriani, Alina Caddemi, Giorgio Vannini and Dominique M. M.-P. Schreurs

      Version of Record online: 25 NOV 2015 | DOI: 10.1002/jnm.2125

  16. Linear and Nonlinear Modelling of GAN Transistors and Circuitss

    1. On-wafer characterization setup for model extraction and validation of high-power GaN HEMT switches

      M. Pirola, V. Camarchia, R. Quaglia and C. Ramella

      Version of Record online: 22 OCT 2015 | DOI: 10.1002/jnm.2118

  17. Advances in Simulation-Driven Modelling and Optimization of Microwave-RF Circuits

    1. Space mapping surrogate-based microwave circuit design centering using a new statistical technique

      Abdel-Karim S.O. Hassan, Hany L. Abdel-Malek, Ahmed S.A. Mohamed and Ahmed E. Elqenawy

      Version of Record online: 1 OCT 2015 | DOI: 10.1002/jnm.2108

  18. Linear and Nonlinear Modelling of GAN Transistors and Circuits

  19. Advances in Simulation-Driven Modelling and Optimization of Microwave-RF Circuits

    1. Optimization of full-wave EM models by low-order low-dimension polynomial surrogate functionals

      José E. Rayas-Sánchez, José L. Chávez-Hurtado and Zabdiel Brito-Brito

      Version of Record online: 13 SEP 2015 | DOI: 10.1002/jnm.2094

    2. Cost-effective GRNN-based modeling of microwave transistors with a reduced number of measurements

      Filiz Güneş, Peyman Mahouti, Salih Demirel, Mehmet Ali Belen and Ahmet Uluslu

      Version of Record online: 10 AUG 2015 | DOI: 10.1002/jnm.2089

    3. Surrogate-assisted design optimization of photonic directional couplers

      Adrian Bekasiewicz and Slawomir Koziel

      Version of Record online: 24 JUL 2015 | DOI: 10.1002/jnm.2088

    4. Optimization of reflection coefficient in ring resonator add/drop filters

      Riyadh Mansoor, Hugh Sasse and Alistair Duffy

      Version of Record online: 22 JUN 2015 | DOI: 10.1002/jnm.2080

  20. Research Articles

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