Progress in Photovoltaics: Research and Applications
© John Wiley & Sons Ltd
Edited By: Martin A. Green, Ryne P. Raffaelle, Tim M. Bruton, Jean-Francois Guillemoles
Impact Factor: 7.365
ISI Journal Citation Reports © Ranking: 2015: 5/88 (Energy & Fuels); 14/145 (Physics Applied); 24/271 (Materials Science Multidisciplinary)
Online ISSN: 1099-159X
Aims and Scope and Partnership with Eu PVSEC
Progress in Photovoltaics offers a prestigious forum for reporting advances in this rapidly developing technology, aiming to reach all interested professionals, researchers and energy policy-makers.
Due to the huge growth of interest in the field, we now receive far more paper submissions than we can ever hope to publish in the journal. It has therefore become necessary to revise the Aims and Scope to be more restrictive in the types of papers that are encouraged and to clarify those that are not.
True to the journal’s title, the key criterion is that submitted papers should report substantial “progress” in photovoltaics. The full Aims and Scope of Progress in Photovoltaics can be found on the Overview page.
In 2017, Progress in Photovoltaics once again proudly partnered with the European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC). Through the partnership the best research papers from the event will be published in Progress in Photovoltaics, the high impact, international journal for the latest research in photovoltaic technology.
Recently Published Articles
- Effects of combined additional indium deposition and potassium fluoride post-deposition treatments on Cu(In,Ga)Se2 thin film solar cells
Ishwor Khatri, Mutsumi Sugiyama and Tokio Nakada
Version of Record online: 24 APR 2017 | DOI: 10.1002/pip.2892
Combined effects of additional indium and potassium fluoride post-deposition treatment were found much effective to improve the performance of the solar cell. The cell performance particularly open-circuit voltage (Voc) improved drastically, which is due to the formation of much Cu-depleted layer at the surface region as confirmed from X-ray photoelectron spectroscopy.
- Degradation fitting of irradiated solar cells using variable threshold energy for atomic displacement
Manuel Salzberger, Christel Nömayr, Paolo Lugli, Scott R. Messenger and Claus G. Zimmermann
Version of Record online: 24 APR 2017 | DOI: 10.1002/pip.2888
We obtained characteristic degradation curves for proton and electron induced degradation of triple junction (3J) and isotype Ga0.5In0.5P/GaAs/Ge solar cells. The displacement damage dose methodology in combination with a varying effective threshold energy for atomic displacement was used. Using the GaAs NIEL in fitting the 3J data, an energy of 21 eV was determined, whereas an energy of 36 eV was found using the Ga0.5In0.5P NIEL. In isotype cells, effective threshold energies of 22 and 34 eV were determined.
- Benchmarking photoactive thin-film materials using a laser-induced steady-state photocarrier grating
Leon W. Veldhuizen, Gede W.P. Adhyaksa, Mirjam Theelen, Erik C. Garnett and Ruud E.I. Schropp
Version of Record online: 19 APR 2017 | DOI: 10.1002/pip.2889
This work demonstrates a comprehensive method, on the basis of the steady-state photocarrier grating technique, to benchmark the quality of traditional and emerging thin-film photoactive materials. Obtained ambipolar diffusion lengths are compared with an effective absorption depth for sunlight. It is observed that for silicon-based thin-film materials, the ambipolar diffusion length is much shorter than their effective absorption depth, while for copper indium gallium selenide chalcopyrite and mixed halide perovskite materials, the diffusion length is similar or larger than this absorption depth.
- InAlAs photovoltaic cell design for high device efficiency
Brittany L. Smith, Zachary S. Bittner, Staffan D. Hellstroem, George T. Nelson, Michael A. Slocum, Andrew G. Norman, David V. Forbes and Seth M. Hubbard
Version of Record online: 17 APR 2017 | DOI: 10.1002/pip.2895
This study presents a new design for a single-junction InAIAs solar cell. The design reduces absorption losses from the low band-gap contact layer and preserves window integrity by integrating an etch stop, which is removed before anti-reflective coating deposition. The final cell had a 17.9% efficiency under 1-sun AM1.5 with an anti-reflective coating. This represents a significant improvement over existing reports of single-junction InAIAs cells to date.
- Effect of occupation of the excited states and phonon broadening on the determination of the hot carrier temperature from continuous wave photoluminescence in InGaAsP quantum well absorbers
Hamidreza Esmaielpour, Vincent R. Whiteside, Louise C. Hirst, Joseph G. Tischler, Chase T. Ellis, Matthew P. Lumb, David V. Forbes, Robert J. Walters and Ian R. Sellers
Version of Record online: 17 APR 2017 | DOI: 10.1002/pip.2890
In this manuscript we explicitly investigate the effects of state filling and phonon broadening on the temperature and power dependent photoluminescence spectra-enabling the contribution of these two important effects when extracting the hot carrier temperature. By carefully studying the relative contributions of these effects (state filling and phonons), their role and contribution to the shape of the photoluminescence spectra can be assessed such that the conditions for realistic hot carrier extraction can be determined.