Progress in Photovoltaics: Research and Applications

Cover image for Vol. 24 Issue 9

Edited By: Martin A. Green, Ryne P. Raffaelle, Tim M. Bruton, Jean-Francois Guillemoles

Impact Factor: 7.365

ISI Journal Citation Reports © Ranking: 2015: 5/88 (Energy & Fuels); 14/145 (Physics Applied); 24/271 (Materials Science Multidisciplinary)

Online ISSN: 1099-159X

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Aims and Scope and Partnership with Eu PVSEC

Progress in Photovoltaics offers a prestigious forum for reporting advances in this rapidly developing technology, aiming to reach all interested professionals, researchers and energy policy-makers.

Due to the huge growth of interest in the field, we now receive far more paper submissions than we can ever hope to publish in the journal. It has therefore become necessary to revise the Aims and Scope to be more restrictive in the types of papers that are encouraged and to clarify those that are not.

True to the journal’s title, the key criterion is that submitted papers should report substantial “progress” in photovoltaics. The full Aims and Scope of Progress in Photovoltaics can be found on the Overview page.


In 2016, Progress in Photovoltaics once again proudly partners with the European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC). Through the partnership the best research papers from the event will be published in Progress in Photovoltaics, the high impact, international journal for the latest research in photovoltaic technology.


Recently Published Articles

  1. High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells

    Walid El-Huni, Anne Migan, Zakaria Djebbour, Jean-Paul Salvestrini and Abdallah Ougazzaden

    Version of Record online: 25 AUG 2016 | DOI: 10.1002/pip.2807

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    In this work, we present a double-junction solar cell with a crystalline silicon solar cell as a bottom junction and an InGaN-based semibulk-structured solar cell as a top junction. Using SILVACO Atlas, we have shown that 50% of indium is needed to ensure the current matching between the top cell and the bottom cell in 2-terminal configuration. We have also modeled a 4-terminal configuration showing the same performance (i.e. conversion efficiency close to 29%) with only 25% of indium content.

  2. Emitter saturation current densities of 22 fA/cm2 applied to industrial PERC solar cells approaching 22% conversion efficiency

    Thorsten Dullweber, Helge Hannebauer, Silke Dorn, Sabrina Schimanke, Agnes Merkle, Carsten Hampe and Rolf Brendel

    Version of Record online: 11 AUG 2016 | DOI: 10.1002/pip.2806

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    The efficiency of industrial PERC cells is presently limited by high carrier recombination of the POCl3-diffused emitter. In this paper we investigate two alternative emitter doping technologies which strongly reduce the emitter saturation current density and hence increase the conversion efficiency from 21.1% up to 21.6% demonstrating further potential towards 21.9% conversion efficiency.

  3. Locating the electrical junctions in Cu(In,Ga)Se2 and Cu2ZnSnSe4 solar cells by scanning capacitance spectroscopy

    Chuanxiao Xiao, Chun-Sheng Jiang, Helio Moutinho, Dean Levi, Yanfa Yan, Brian Gorman and Mowafak Al-Jassim

    Version of Record online: 9 AUG 2016 | DOI: 10.1002/pip.2805

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    We determined the electrical junction (EJ) locations in Cu(In,Ga)Se2 (CIGS) and Cu2ZnSnSe4 (CZTS) solar cells with ~20-nm accuracy by developing scanning capacitance spectroscopy applicable to the thin-film devices. We found an n-type CIGS in the region next to the CIGS/CdS interface, and the EJ is at ~40 nm from the interface at the CIGS side, thus a homojunction of the cell. In contrast, such an n-type CZTS was not found in the CZTS/CdS cells and the EJ is ~20 nm from the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell.

  4. You have full text access to this OnlineOpen article
    Microstructured ZnO coatings combined with antireflective layers for light management in photovoltaic devices

    Jesse A. Frantz, Jason D. Myers, Robel Y. Bekele, Lynda E. Busse and Jasbinder S. Sanghera

    Version of Record online: 30 JUL 2016 | DOI: 10.1002/pip.2804

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    We describe microstructured ZnO coatings, fabricated by a simple and inexpensive wet etch process, that improve photovoltaic device performance through their antireflective properties and their tendency to scatter incoming light at large angles. When combined with a traditional quarter-wave MgF2 coating, these randomly patterned, microstructured ZnO coatings increase short circuit currents of example Cu(In,Ga)Se2 (CIGS) devices by over 20% in comparison to those of uncoated devices at normal incidence.

  5. SiOyNx/SiNx stack: a promising surface passivation layer for high-efficiency and potential-induced degradation resistant mc-silicon solar cells

    Chunlan Zhou, Junjie Zhu, Su Zhou, Yehua Tang, Sean E. Foss, Halvard Haug, Ørnulf Nordseth, Erik S. Marstein and Wenjing Wang

    Version of Record online: 25 JUL 2016 | DOI: 10.1002/pip.2803

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    In this paper, It was found that a SiOyNx film with ~6 nm thickness in the SiOyNx/SiNx stacks is sufficient to provide an effective surface recombination velocity Seff < 2 cm/s. A maximum absolute efficiency gain of 0.5% was obtained compared with single SiNx-coated mc-Si solar cells. In addition, resistance to PID is also significantly improved.