Progress in Photovoltaics: Research and Applications

Cover image for Vol. 25 Issue 3

Edited By: Martin A. Green, Ryne P. Raffaelle, Tim M. Bruton, Jean-Francois Guillemoles

Impact Factor: 7.365

ISI Journal Citation Reports © Ranking: 2015: 5/88 (Energy & Fuels); 14/145 (Physics Applied); 24/271 (Materials Science Multidisciplinary)

Online ISSN: 1099-159X

Recently Published Issues

See all

Aims and Scope and Partnership with Eu PVSEC

Progress in Photovoltaics offers a prestigious forum for reporting advances in this rapidly developing technology, aiming to reach all interested professionals, researchers and energy policy-makers.

Due to the huge growth of interest in the field, we now receive far more paper submissions than we can ever hope to publish in the journal. It has therefore become necessary to revise the Aims and Scope to be more restrictive in the types of papers that are encouraged and to clarify those that are not.

True to the journal’s title, the key criterion is that submitted papers should report substantial “progress” in photovoltaics. The full Aims and Scope of Progress in Photovoltaics can be found on the Overview page.


In 2017, Progress in Photovoltaics once again proudly partnered with the European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC). Through the partnership the best research papers from the event will be published in Progress in Photovoltaics, the high impact, international journal for the latest research in photovoltaic technology.

EU PVSEC 2017


Recently Published Articles

  1. Wide-bandgap p-type microcrystalline silicon oxycarbide using additional trimethylboron for silicon heterojunction solar cells

    Dong-Won Kang, Porponth Sichanugrist, He Zhang and Makoto Konagai

    Version of Record online: 17 FEB 2017 | DOI: 10.1002/pip.2875

    Thumbnail image of graphical abstract

    We propose a novel p-type wide-bandgap silicon oxycarbide materials and its film preparation.

    The new p-type microcrystalline silicon oxycarbide (p-μc-SiOxCy:H) films with additional trimethylboron doping exhibited average wide bandgaps (E04) about 2.18 eV.

    This new film was employed as an emitter of HIT-type c-Si solar cells and found that it boosts mainly Voc because of wide E04 and thus power conversion efficiency of 18.9 % based on non-textured flat wafer was attained.

  2. New guidelines for a more accurate extraction of solar cells and modules key data from their current–voltage curves

    Bertrand Paviet-Salomon, Jacques Levrat, Vahid Fakhfouri, Yanik Pelet, Nicolas Rebeaud, Matthieu Despeisse and Christophe Ballif

    Version of Record online: 10 FEB 2017 | DOI: 10.1002/pip.2872

    Thumbnail image of graphical abstract

    We investigate the optimisation of the fit procedures to determine with the highest accuracy the key data of photovoltaic devices from their current–voltage characteristics. We show that the state-of-the-art fit procedures are outperformed by smart adjustments of the fit range and the regression type. We improve the accuracy in determining the short-circuit current density by up to 15 times, the open-circuit voltage by 3 to 10 times, and the maximum power by 4 to 5 times, compared to state-of-the-art approaches.

  3. Adjusting the Ga grading during fast atmospheric processing of Cu(In,Ga)Se2 solar cell absorber layers using elemental selenium vapor

    Sebastian Simon Schmidt, Christian Wolf, Humberto Rodriguez-Alvarez, Jan-Peter Bäcker, Christian Alexander Kaufmann, Saoussen Merdes, Florian Ziem, Manuel Hartig, Sonja Cinque, Iris Dorbandt, Christine Köble, Daniel Abou-Ras, Roland Mainz and Rutger Schlatmann

    Version of Record online: 8 FEB 2017 | DOI: 10.1002/pip.2865

    Thumbnail image of graphical abstract

    We study the Cu(In,Ga)Se2 absorber fabrication by fast atmospheric pressure selenization of metal precursor films utilizing elemental selenium vapor from independent sources. We find that a high Se supply during selenization leads to the generally observed Ga accumulation at the back contact, while a reduced Se supply leads to a more homogeneous Ga distribution within the absorber. By optimizing the precursor as well as the Ga in-depth distribution in the CIGSe layer, a conversion efficiency of 15.5% was achieved.

  4. Surface nanocrystalline Si structure and its surface passivation for highly efficient black Si solar cells

    Kentaro Imamura, Daichi Irishika and Hikaru Kobayashi

    Version of Record online: 7 FEB 2017 | DOI: 10.1002/pip.2867

    Thumbnail image of graphical abstract

    19.5% conversion efficiency crystalline silicon (Si) solar cells having simple structure without antireflection coating have been fabricated using the surface structure chemical transfer method which produces a nanocrystalline Si layer. This high conversion efficiency results from ultralow reflectivity due to the nanocrystalline Si layer and effective surface passivation of the layer using deposition of phosphosilicate glass, followed by heat treatment.

  5. Concepts for external light trapping and its utilization in colored and image displaying photovoltaic modules

    Lourens van Dijk, Jorik van de Groep, Leon W. Veldhuizen, Marcel Di Vece and Ruud E. I. Schropp

    Version of Record online: 3 FEB 2017 | DOI: 10.1002/pip.2863

    Thumbnail image of graphical abstract

    We introduce a design of a light trapping module that recycles the reflected light and thereby improves the module power conversion efficiency. A lens array on the module cover glass directs the incident sunlight through small apertures in a reflective coating at the backside of the cover glass. The outlook of highly efficient, colored, and even image displaying modules makes this technology an interesting candidate for a new class of photovoltaic modules.

SEARCH

SEARCH BY CITATION