Progress in Photovoltaics: Research and Applications

Cover image for Vol. 24 Issue 10

Edited By: Martin A. Green, Ryne P. Raffaelle, Tim M. Bruton, Jean-Francois Guillemoles

Impact Factor: 7.365

ISI Journal Citation Reports © Ranking: 2015: 5/88 (Energy & Fuels); 14/145 (Physics Applied); 24/271 (Materials Science Multidisciplinary)

Online ISSN: 1099-159X

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Aims and Scope and Partnership with Eu PVSEC

Progress in Photovoltaics offers a prestigious forum for reporting advances in this rapidly developing technology, aiming to reach all interested professionals, researchers and energy policy-makers.

Due to the huge growth of interest in the field, we now receive far more paper submissions than we can ever hope to publish in the journal. It has therefore become necessary to revise the Aims and Scope to be more restrictive in the types of papers that are encouraged and to clarify those that are not.

True to the journal’s title, the key criterion is that submitted papers should report substantial “progress” in photovoltaics. The full Aims and Scope of Progress in Photovoltaics can be found on the Overview page.


In 2016, Progress in Photovoltaics once again proudly partners with the European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC). Through the partnership the best research papers from the event will be published in Progress in Photovoltaics, the high impact, international journal for the latest research in photovoltaic technology.


Recently Published Articles

  1. Failure analysis on lattice matched GaInP/Ga(In)As/Ge commercial concentrator solar cells after temperature accelerated life tests

    Vincenzo Orlando, Mercedes Gabás, Beatriz Galiana, Pilar Espinet-González, Santiago Palanco, Neftali Nuñez, Manuel Vázquez, Kenji Araki and Carlos Algora

    Version of Record online: 21 SEP 2016 | DOI: 10.1002/pip.2818

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    In this paper, failure analysis has been carried out after a temperature-accelerated life test on lattice matched triple junction commercial solar cells. Solar cells were forward biased in darkness inside climatic chambers in order to emulate the photo-generated current under nominal working conditions. Current is the cause of degradation while temperature dominates the accelerating factor of the 1`aging test.

  2. Capping vertically aligned InGaAs/GaAs(Sb) quantum dots with a AlGaAsSb spacer layer in intermediate-band solar cell devices

    Wei-Sheng Liu, Hsiao-Chien Lin and Ren-Yo Liu

    Version of Record online: 12 SEP 2016 | DOI: 10.1002/pip.2815

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    This study demonstrated the feasibility of fabricating a highly stacked vertically aligned InGaAs/GaAs(Sb) quantum dot (QD) structure with an AlGaAsSb spacer layer for improving the dot-size uniformity and device performances of QD intermediate-band solar cell (QD-IBSC) devices. The device characteristics of the InGaAs/GaAs QD-IBSC show that the short current density improved by 13% compared with the reference GaAs cell, and the QDs with GaAsSb capping layer show an extended photoresponse to 1200 nm due to the absorption of low-energy photons by the QDs.

  3. High-efficiency Cu2ZnSn(S,Se)4 solar cells fabricated through a low-cost solution process and a two-step heat treatment

    Shih-Hsiung Wu, Chia-Wen Chang, Hui-Ju Chen, Chuan-Feng Shih, Yu-Yun Wang, Chou-Cheng Li and Sheng-Wen Chan

    Version of Record online: 6 SEP 2016 | DOI: 10.1002/pip.2810

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    A method for fabricating high-efficiency (10.1%) Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is presented, and it is based on a non-explosive, low-cost, and relatively simple solution process followed by sulfurisation before selenisation process. In the proposed two-step heat treatment, sulfurisation before selenisation effectively forms a compact CZTSSe layer that eliminated the fine-grain bottom layer, modifies of the grain boundary chemistry that might change the band alignment and carrier extraction, and decreased the thickness of the Mo(S,Se)2 interlayer, improving the cell efficiency.

  4. Economic competitiveness of III–V on silicon tandem one-sun photovoltaic solar modules in favorable future scenarios

    David C. Bobela, Lynn Gedvilas, Michael Woodhouse, Kelsey A. W. Horowitz and Paul A. Basore

    Version of Record online: 5 SEP 2016 | DOI: 10.1002/pip.2808

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    Both GaAs/Si and InGaP/Si tandems are potentially cost-competitive in scenarios where area-related balance-of-system costs are high, like space-constrained residential applications. However, the maximum reduction in system cost, compared with best in class single junctions, is less than 10%. III–V/Si tandems do not appear to be potentially cost-competitive for utility-scale applications, regardless of the III–V cell cost.

  5. High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells

    Walid El-Huni, Anne Migan, Zakaria Djebbour, Jean-Paul Salvestrini and Abdallah Ougazzaden

    Version of Record online: 25 AUG 2016 | DOI: 10.1002/pip.2807

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    In this work, we present a double-junction solar cell with a crystalline silicon solar cell as a bottom junction and an InGaN-based semibulk-structured solar cell as a top junction. Using SILVACO Atlas, we have shown that 50% of indium is needed to ensure the current matching between the top cell and the bottom cell in 2-terminal configuration. We have also modeled a 4-terminal configuration showing the same performance (i.e. conversion efficiency close to 29%) with only 25% of indium content.