Progress in Photovoltaics: Research and Applications

Cover image for Vol. 25 Issue 2

Edited By: Martin A. Green, Ryne P. Raffaelle, Tim M. Bruton, Jean-Francois Guillemoles

Impact Factor: 7.365

ISI Journal Citation Reports © Ranking: 2015: 5/88 (Energy & Fuels); 14/145 (Physics Applied); 24/271 (Materials Science Multidisciplinary)

Online ISSN: 1099-159X

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Aims and Scope and Partnership with Eu PVSEC

Progress in Photovoltaics offers a prestigious forum for reporting advances in this rapidly developing technology, aiming to reach all interested professionals, researchers and energy policy-makers.

Due to the huge growth of interest in the field, we now receive far more paper submissions than we can ever hope to publish in the journal. It has therefore become necessary to revise the Aims and Scope to be more restrictive in the types of papers that are encouraged and to clarify those that are not.

True to the journal’s title, the key criterion is that submitted papers should report substantial “progress” in photovoltaics. The full Aims and Scope of Progress in Photovoltaics can be found on the Overview page.


In 2016, Progress in Photovoltaics once again proudly partners with the European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC). Through the partnership the best research papers from the event will be published in Progress in Photovoltaics, the high impact, international journal for the latest research in photovoltaic technology.


Recently Published Articles

  1. Evaluating the economic viability of CdTe/CIS and CIGS/CIS tandem photovoltaic modules

    Sanjini U. Nanayakkara, Kelsey Horowitz, Ana Kanevce, Michael Woodhouse and Paul Basore

    Version of Record online: 20 JAN 2017 | DOI: 10.1002/pip.2849

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    We analyze the potential cost competitiveness of two frameless, glass–glass thin-film tandem photovoltaic module structures, cadmium telluride/CuInSe2 (CIS) and Cu(In0.3,Ga0.7)Se2/CIS, based on the demonstrated cost of manufacturing the respective component cell technologies in high volume. We found that both tandem modules are about 4% (absolute) more efficient than a module using the top-cell material alone. These tandem modules might reduce total system cost by 11% in applications having a high area-related balance-of-system cost, such as area-constrained residential systems.

  2. Thin Al2O3 passivated boron emitter of n-type bifacial c-Si solar cells with industrial process

    Guilin Lu, Fei Zheng, Jianqiang Wang and Wenzhong Shen

    Version of Record online: 16 JAN 2017 | DOI: 10.1002/pip.2859

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    We have successfully achieved the large area (238.95 cm2) high efficiency of 20.89% (front) and 18.45% (rear) n-type bifacial c-Si solar cells using BBr3 diffusion emitter and P ion-implanted back surface field in conjunction with ultrathin Al2O3 (4 nm) passivated p+ emitter and fine finger double printing technology. The present simplified cell structure has great advantages in the low-cost n-type bifacial c-Si solar cell industrialization, not only effectively passivating the p+ emitter surfaces, but also fully compatible with the existing production lines and processes.

  3. Unraveling bulk defects in high-quality c-Si material via TIDLS

    Simone Bernardini, Tine U. Nærland, Adrienne L. Blum, Gianluca Coletti and Mariana I. Bertoni

    Version of Record online: 19 DEC 2016 | DOI: 10.1002/pip.2847

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    Defect parameters contour mapping for Temperature and Injection dependence Lifetime Spectroscopy studies of n-type float zone silicon from 30 to 150 °C. The presented method enables characterization of high quality silicon substrates with impurity concentrations well below standard detection limits

  4. Passivation at the interface between liquid-phase crystallized silicon and silicon oxynitride in thin film solar cells

    Natalie Preissler, Jan Amaru Töfflinger, Onno Gabriel, Paul Sonntag, Daniel Amkreutz, Bernd Stannowski, Bernd Rech and Rutger Schlatmann

    Version of Record online: 19 DEC 2016 | DOI: 10.1002/pip.2852

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    In the manuscript entitled “Passivation at the interface between liquid-phase crystallized silicon and silicon oxynitride in thin film solar cells” by N. Preissler*, J. A. Töfflinger, O. Gabriel, P. Sonntag, D. Amkreutz, B. Stannowski, R. Schlatmann and B. Rech the improvement of the passivation quality at the interface liquid-phase crystallized silicon (LPC-Si)/interlayer interface through a high-temperature hydrogen plasma treatment (HPT) is demonstrate. The improvement of solar cell parameters after HPT is suggested to be governed by an improved quality of the bulk of hydrogenated n-type LPC-Si but not for p-type LPC-Si.

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    Impact of compositional grading and overall Cu deficiency on the near-infrared response in Cu(In, Ga)Se2 solar cells

    Enrico Avancini, Romain Carron, Benjamin Bissig, Patrick Reinhard, Roberto Menozzi, Giovanna Sozzi, Simone Di Napoli, Thomas Feurer, Shiro Nishiwaki, Stephan Buecheler and Ayodhya N. Tiwari

    Version of Record online: 9 DEC 2016 | DOI: 10.1002/pip.2850

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    An improved response in the NIR-EQE of CIGS solar cells is observed upon increasing Cu concentration in the Ga-graded CIGS absorber. This is found to be because of changes in the NIR absorption coefficient upon varying composition, rather than to an improved collection function. The improved optical properties can be exploited to increase the short-circuit current density and therefore the efficiency.