Angewandte Chemie International Edition
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Inside Cover: Surface Passivation and Transfer Doping of Silicon Nanowires (Angew. Chem. Int. Ed. 52/2009)
The large surface-to-volume ratio of nanomaterials could facilitate efficient doping using purely surface passivation and adsorption. In their Communication on page 9896 ff., R. Q. Zhang, S. T. Lee, and co-workers describe surface passivation and transfer doping in silicon nanowires (SiNWs, see picture) by surface termination with hydrogen atoms and adsorption of ammonia molecules. The approach is an alternative to conventional volume doping to modulate the conductivity of SiNWs or other nanomaterials.