Chemical Vapor Deposition
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Online ISSN: 1521-3862
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Recently Published Articles
- A Hybrid-Type CVD System for Graphene Growth (pages 176–180)
Grigory Skoblin, Niclas Lindvall, Jie Sun and August Yurgens
Article first published online: 23 SEP 2015 | DOI: 10.1002/cvde.201507163
An effectively hot-wall system for graphene growth is made from a cold-wall one by encapsulating the metal foil in between two heaters. This simple conversion demonstrates improved temperature control and high temperature ramping rate. It also allows reaching lower nucleation density and provides better control of growth kinetics.
- Plasma Enhanced Chemical Vapor Deposition of Poly(2,2,3,4,4,4-hexafluorobutyl acrylate) Thin Films (pages 188–195)
Mustafa Karaman and Ezgi Yenice
Article first published online: 23 SEP 2015 | DOI: 10.1002/cvde.201507168
Plasma enhanced chemical vapor deposition (PECVD) is used for the synthesis of thin films of poly(2,2,3,4,4,4-hexafluorobutyl acrylate) (PHFBA). PHFBA is a non-toxic and low surface energy polymer containing -CF3 end group. A high structural retention is observed for the films deposited at low powers and high temperatures. PHFBA thin films exhibit superhydrophobic properties when deposited on rough fiber mat surfaces with water contact angles greater than 150°.
- A Quantum Chemical Descriptor for CVD Precursor Design: Predicting Decomposition Rates of TBP and TBAs Isomers and Derivatives (pages 161–165)
Andreas Stegmüller and Ralf Tonner
Article first published online: 23 SEP 2015 | DOI: 10.1002/cvde.201504332
Easily accessible information from quantum chemical computations can be used to predict decomposition barriers for phosphorous and arsenic precursor molecules for CVD. Based on the mechanistic description of the β-hydrogen elimination reaction, a precursor with a very low decomposition barrier is suggested.
- Preparation of Highly Flexible SiC Nanowires by Fluidized Bed Chemical Vapor Deposition (pages 196–203)
Rongzheng Liu, Malin Liu, Jiaxing Chang, Youlin Shao and Bing Liu
Article first published online: 23 SEP 2015 | DOI: 10.1002/cvde.201507171
A novel catalyst-assisted fluidized bed chemical vapor deposition method is proposed to prepare high flexible SiC nanowires. The nanowires and the catalyst tips show highly epitaxial growth with a very smooth nanoscale interface.
- Atomic Layer Deposition and Characterization of Dysprosium-Doped Zirconium Oxide Thin Films (pages 181–187)
Aile Tamm, Jekaterina Kozlova, Tõnis Arroval, Lauri Aarik, Peeter Ritslaid, Hector García, Helena Castán, Salvador Dueñas, Kaupo Kukli and Jaan Aarik
Article first published online: 23 SEP 2015 | DOI: 10.1002/cvde.201507170
Dy2O3-doped ZrO2 films are grown on silicon substrates by ALD at 300 °C using Dy(thd)3, ZrCl4 and H2O as precursors. Despite low growth rate of Dy2O3, the process is suitable for doping ZrO2. The films contain tetragonal zirconia already in the as-deposited state and grow conformally onto 3D substrates. The capacitors that are based on these dielectrics demonstrate current–voltage and capacitance characteristics typical for high-permittivity oxides.