Chemical Vapor Deposition

Cover image for Vol. 20 Issue 4-5-6

Online ISSN: 1521-3862

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Recently Published Articles

  1. Focused Electron Beam-Induced CVD of Iron: a Practical Guide for Direct Writing

    Marco Gavagnin, Heinz D. Wanzenboeck, Mostafa M. Shawrav, Domagoj Belic, Stefan Wachter, Simon Waid, Michael Stoeger–Pollach and Emmerich Bertagnolli

    Article first published online: 20 AUG 2014 | DOI: 10.1002/cvde.201407118

    Full Paper: Focused electron beam-induced deposition (FEBID) is used as a direct-write approach for the fabrication of Fe-based nanostructures on Si(100), starting from Fe(CO)5. FEBID uses an electron beam to locally induce a CVD process. A systematic variation of FEBID parameters is performed to study their influence on the geometry and composition of the deposit. Based on the results, specific deposition conditions are suggested for nanomagnetic applications and the fabrication of large structures.

  2. Electron Beam-Induced CVD of Nanoalloys for Nanoelectronics

    Mostafa Moonir Shawrav, Domagoj Belić, Marco Gavagnin, Stefan Wachter, Markus Schinnerl, Heinz D. Wanzenboeck and Emmerich Bertagnolli

    Article first published online: 19 AUG 2014 | DOI: 10.1002/cvde.201407119

    Full Paper: Focused electron beam-induced deposition is utilized to co-deposit gold and iron structures using dimethyl-gold(III)-trifluoroacetylacetonate and iron pentacarbonyl metal-organic precursors. The deposition rate and chemical composition of these direct-write Au-Fe nanoalloys can be controlled by varying the working pressures.

  3. Plasma-Assisted Atomic Layer Deposition of PtOx from (MeCp)PtMe3 and O2 Plasma

    Ivo J. M. Erkens, Marcel A. Verheijen, Harm C. M. Knoops, Tatiana F. Landaluce, Fred Roozeboom and Wilhelmus M. M. Kessels

    Article first published online: 6 AUG 2014 | DOI: 10.1002/cvde.201407109

    Thumbnail image of graphical abstract

    Thin films and nanoparticles of PtOx (2.5 < x < 2.7) are deposited by plasma-assisted ALD in a temperature window from room temperature to 300°C by controlling the O2 plasma and (MeCp)PtMe3 exposure. With increasing substrate temperature, the thermal stability of PtOx is found to decrease and the reducing activity of the precursor ligands is found to increase. The material properties of the PtOx films are studied and it is shown that a film conformality of 90% can be achieved in trenches with an aspect ratio of 9.

  4. Atomic Layer Deposition of Transparent VOx Thin Films for Resistive Switching Applications

    Trilok Singh, Shuangzhou Wang, Nabeel Aslam, Hehe Zhang, Susanne Hoffmann-Eifert and Sanjay Mathur

    Article first published online: 4 AUG 2014 | DOI: 10.1002/cvde.201407122

    Thumbnail image of graphical abstract

    Full Paper: Nanoscopic VOx coatings are produced by atomic layer deposition for resistive random access memory devices. The devices show bipolar switching behavior with resistance ratio ROFF/RON>103 whereas, at higher electroforming voltage (4 - 5 V), threshold switching behavior is observed.

  5. Atomic Layer Deposition of TiOx/Al2O3 Bilayer Structures for Resistive Switching Memory Applications

    Hehe Zhang, Nabeel Aslam, Marcel Reiners, Rainer Waser and Susanne Hoffmann-Eifert

    Article first published online: 28 JUL 2014 | DOI: 10.1002/cvde.201407123

    The resistive switching of TiOx/Al2O3 bilayers integrated in µ-crossbar devices is investigated for future ReRAM. The bilayer stack is realized in consecutive atomic layer depositions (ALD) at 300 °C. Amorphous Al2O3 films exhibit a dielectric permittivity of 8.0 and disruptive field strength of 7 MV cm−1, whereas the oxygen-deficient TiOx is semiconducting. The bipolar-type resistive switching characteristics of TiN/TiOx/Al2O3/Pt cells show a strong dependence on both oxide layer thicknesses.