Chemical Vapor Deposition
Copyright © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Online ISSN: 1521-3862
Materials Science Weekly Newsletter
Recently Published Articles
- Silicon Oxycarbide Thin Films by Remote Microwave Hydrogen Plasma CVD Using a Tetramethyldisiloxane Precursor
Aleksander M. Wrobel, Pawel Uznanski, Agnieszka Walkiewicz-Pietrzykowska, Bartosz Glebocki and Ewa Bryszewska
Article first published online: 7 MAY 2015 | DOI: 10.1002/cvde.201504330
The effect of substrate temperature (TS) on the growth rate, chemical structure, surface morphology, density, refractive index, and optical absorption of a-SiCO:H films is reported. The increase in TS from 30 °C to 350 °C involves the transformation of the film from polymeric, low-density material to strongly cross-linked, dense Si-oxycarbide ceramics.
- Magnesium Oxide Thin Films with Tunable Crystallographic Preferred Orientation via Aerosol-Assisted CVD
Sapna D. Ponja, Ivan P. Parkin and Claire J. Carmalt
Article first published online: 4 MAY 2015 | DOI: 10.1002/cvde.201507156
MgO thin films from magnesium acetate via AACVD at various temperatures using methanol or ethanol as carrier solvents is shown. Films are fully characterized and the refractive index is calculated. For industrial applications, film properties can be altered by simply modifying the deposition conditions. SEM shows the surface morphology of a film deposited at 600 °C in a methanol system.
- The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal-Organic Vapor Phase Epitaxy of GaAs1-yBiy Films
Kamran Forghani, Yingxin Guan, Adam Wood, Susan Babock, Luke Mawst and Thomas F. Kuech
Article first published online: 27 APR 2015 | DOI: 10.1002/cvde.201507160
The effectiveness of two Bi sources, trimethyl bismuth and triethyl bismuth, in the growth of GaAsBi thin films is studied. The figure shows the SEM images of a GaAs-GaAs1-yBiy superlattice structure grown with relatively high (not optimized) Bi source flux. White spots are Bi droplets, disturbing the growth of the SLs, and roughening the film surfaces.
- MOCVD Synthesis of Terbium Oxide Films and their Optical Properties
Svetlana V. Belaya, Vladimir V. Bakovets, Igor P. Asanov, Ilya V. Korolkov and Veronika S. Sulyaeva
Article first published online: 24 APR 2015 | DOI: 10.1002/cvde.201507153
C-Tb2O3 films are deposited on Si(100) substrates from a vapor of Tb(thd)3 under an inert atmosphere. The sesquioxide films are transformed to higher oxide films under annealing in air. Some optical characteristics are obtained for the films before and after annealing in air and compared with the known values.
- Synthesis of Carbon Nanotubes from Propane**
Mariusz Zdrojek, Jan Sobieski, Anna Duzynska, Ewa Zbydniewska, Wlodek Strupinski, Jacek Ratajczak and Jarosław Judek
Article first published online: 9 APR 2015 | DOI: 10.1002/cvde.201404329
Growth of high quality CNTs using pure propane is demonstrated over a range of growth temperatures (600–1100 °C). SWCNT and MWCNT volumes in the grown material can by tuned using the growth temperature. The SEM image shows CNTs grown at 900 °C with both SWCNTs and MWCNTs visible. Increasing temperature yields higher depositions of disordered carbon material besides NTs.