Chemical Vapor Deposition
Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Online ISSN: 1521-3862
Materials Science Weekly Newsletter
Recently Published Articles
- Surface Decoration of ϵ-Fe2O3 Nanorods by CuO Via a Two-Step CVD/Sputtering Approach**
Davide Barreca, Giorgio Carraro, Daniel Peeters, Alberto Gasparotto, Chiara Maccato, Wilhelmus M. M. Kessels, Valentino Longo, Francesca Rossi, Elza Bontempi, Cinzia Sada and Anjana Devi
Article first published online: 22 JUL 2014 | DOI: 10.1002/cvde.201407108
A two-step synthetic strategy for the synthesis of Fe2O3/CuO composites is presented. The approach consists in the growth of ϵ-Fe2O3 by CVD, followed by copper sputtering and annealing in air. A multi-technique characterization showed ϵ-Fe2O3 nanorod arrays possessing an intimate contact with nanometer-sized CuO particles, the loading and dispersion of which can be tuned as a function of the process duration.
- Vanadium Oxide Compounds: Structure, Properties, and Growth from the Gas Phase
Naoufal Bahlawane and Damien Lenoble
Article first published online: 22 JUL 2014 | DOI: 10.1002/cvde.201400057
A thermodynamic analysis is performed to comment on the stability of vanadium oxide structures based on the calculated formation energies. The structure-related properties of the identified stable and metastable compounds are discussed, with an emphasis on the reported functional applications. Finally, the established gas-phase chemical deposition processes for the growth of vanadium oxide compounds are reviewed, referring to the type of precursors used.
- Investigation of the Effect of the Substrate Position Relative to the Source on the Optoelectrical and Structural Properties of Pure Nanostructured Tin Oxide by APCVD
Masoudeh Maleki and Seyed Mohammad Rozati
Article first published online: 22 JUL 2014 | DOI: 10.1002/cvde.201407103
Full Paper: Pure SnO2 films are deposited by APCVD onto glass substrates at various substrate angles with respect to the source position. The deposition temperature is 500°C and oxygen is used as both the carrier gas and the oxidizing agent. The sheet resistance varies between 106 and 241 Ω/□. Optical properties show clear changes as a result of the substrate position with respect to the source.
- Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors
Timothee Blanquart, Jaakko Niinistö, Mikko Ritala and Markku Leskelä
Article first published online: 20 JUL 2014 | DOI: 10.1002/cvde.201400055
Review: This review provides a brief description of ALD and presents studies on the deposition of thin films of groups 4 and 5 metal oxides using ALD. A description of the general ALD properties of homoleptic precursors, in addition to a review of the thermal ALD of groups 4 and 5 metal oxides from heteroleptic precursors, is presented. Trends in the properties of heteroleptic ALD precursors based on the literature review and recent experimental data are discussed.
- Cyclopentadienyl Precursors for the Atomic Layer Deposition of Erbium Oxide Thin Films
Timothee Blanquart, Mikko Kaipio, Jaakko Niinistö, Marco Gavagnin, Valentino Longo, Laurie Blanquart, Clement Lansalot, W. Noh, Heinz D. Wanzenböck, Mikko Ritala and Markku Leskelä
Article first published online: 20 JUL 2014 | DOI: 10.1002/cvde.201407116
Full Paper: The ALD processes for three novel precursors for the ALD of Er2O3, namely Er(nBuCp)3, Er(iPrCp)3 and Er(MeCp)2(iPr-amd), are developed and the films are characterized. The first report of the conformal ALD growth of Er2O3 thin film on a high-aspect-ratio structure is also included.