Orientation of electron spins in hybrid ferromagnet–semiconductor nanostructures
I. A. Akimov, V. L. Korenev, V. F. Sapega, L. Langer, S. V. Zaitsev, Yu. A. Danilov, D. R. Yakovlev and M. Bayer
Article first published online: 26 FEB 2014 | DOI: 10.1002/pssb.201350236
This article provides an overview of optical studies of electron spin orientation in ferromagnet-semiconductor hybrid structures composed of a GaMnAs ferromagnetic layer and InGaAs quantum well. The authors discuss and compare the strengths of two main contributions to the FM-induced spin polarization of the semiconductor charge carriers: equilibrium spin polarization due to thermal population of spin levels split by an effective exchange field and dynamical polarization arising from spin dependent capture of electrons through the ferromagnet-semiconductor interface.