physica status solidi (b)
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1521-3951
Hartree and Exchange Effects in the Calculation of Hole Levels in p-Type Delta-Doped Diamond Systems
This issue's Editor's Choice paper  by Miguel E. Mora-Ramos reports hole states in boron δ-doped diamond quantum wells, calculated by a local density Thomas-Fermi–Dirac approximation scheme including Hartree and exchange contributions in the hole gas. The cover picture depicts the valence band potential profile and the calculated hole energy levels for a two-dimensional hole concentration p2D = 1013 cm–2. It is found that the hole spectrum is highly sensitive to the values of the valence effective masses. These findings are important for the interpretation of optical absorption experiments in such diamond systems.The author is a professor of theoretical and mathematical physics at the Autonomous University of the State of Morelos, Mexico, and works on electronic states in various low-dimensional semiconductor systems and heterostructures, including nitrides and diamond.