physica status solidi (b)
Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1521-3951
Papers presented at the International Workshop on Nitride Semiconductors (IWN 2002)
This issue contains papers presented at the International Workshop on Nitride Semiconductors (IWN 2002) which was held in Aachen, Germany, July 22–25, 2002. The objective of this workshop was to provide a forum for active nitride researchers to gather and promote scientific and technical discussions. It covered all aspects of nitride semiconductor systems such as AlInGaN, AlGaNAsP, and other materials containing nitrogen as one of the major constituents. Fundamental topics including AlGaN and InGaN heterostructures, surfaces, polarisation and piezoelectric effects, InN and small band-gap materials, transport, impurties, defects, doping, electrical, optical, and structural properties, lattice dynamics and phonons are covered in this issue. Please note that further papers from IWN 2002 on light emitting and laser diodes, transistors and detectors, growth, bulk and epitaxial lateral overgrowth, and contacts are published in phys. stat. sol. (a) 194, No. 2 (2002). The full Proceedings of this conference will be published in the first issue of our new and third journal series physica status solidi (c) – conferences, Vol. 0, No. 1 (2002).The cover picture is taken from paper  and shows the potential distribution around an edge dislocation in p-GaN, measured by electron holography. The positive potential gives strong evidence for a positive charge of dislocations in p-doped material.