physica status solidi (b)

Cover image for Vol. 252 Issue 9

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1521-3951

Associated Title(s): physica status solidi (a), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

Prospects for carrier-mediated ferromagnetism in GaN

239_02/2003Room-temperature ferromagnetism has been theoretically predicted for Mn-doped GaN, making this material promising for spintronic applications. The cover figure shows the defect molecule picture for Mn3+-induced gap states, which are derived from the antibonding transition-metal t2[UPWARDS ARROW] orbitals and the dangling bond t2[UPWARDS ARROW][DOWNWARDS ARROW] states of the host lattice. One of the d-like Mn3+ t2[UPWARDS ARROW] levels is occupied by a hole. These localized spins together with free valence-band holes mediate the magnetic coupling, resulting in a very high Curie temperature.The first author of the Feature Article [1], Tobias Graf, has been working on electrically detected magnetic resonance of III–V alloys, at the Walter Schottky Institut of TU München.

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