physica status solidi (b)
Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1521-3951
Prospects for carrier-mediated ferromagnetism in GaN
Room-temperature ferromagnetism has been theoretically predicted for Mn-doped GaN, making this material promising for spintronic applications. The cover figure shows the defect molecule picture for Mn3+-induced gap states, which are derived from the antibonding transition-metal t2 orbitals and the dangling bond t2 states of the host lattice. One of the d-like Mn3+ t2 levels is occupied by a hole. These localized spins together with free valence-band holes mediate the magnetic coupling, resulting in a very high Curie temperature.The first author of the Feature Article , Tobias Graf, has been working on electrically detected magnetic resonance of III–V alloys, at the Walter Schottky Institut of TU München.