physica status solidi (b)
Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1521-3951
Conditions and possible mechanism of condensation of e–h pairs in bulk GaAs at room temperature
This issue's Editor's Choice  discusses a mechanism of formation of a coherent BCS-like state in GaAs. The topic of Bose condensation of excitons has been one of the most fascinating fields of condensed matter physics during recent years.
As shown in the cover picture, bound electron–hole pairs in a highly degenerate semiconductor are squeezed between the band gap and the occupied subband where they are not destroyed and dephased by collisions. The occupied subband shrinks while the number of free electrons decreases when they gradually condense into the bosonic ensemble. The process of formation of the bosonic subsystem stops self-consistently when the relaxation and destruction of bosons into components becomes possible again.
The author Peter P. Vasil'ev is a Leading Research Fellow at the Quantum Radiophysics Department of the PN Lebedev Physical Institute. His main fields of research are the generation of ultrashort pulses, their interaction with semiconductors, and condensation phenomena in semiconductors.