physica status solidi (b)
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1521-3951
Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures
The cover picture of this issue depicts indium composition fluctuations in InGaN/GaN multi quantum wells. The coded color strain distribution (left) was derived from finite element method calculations of the strain relaxation process and high-resolution transmission electron microscopy (HRTEM) image simulations, superimposed on the HRTEM image of the quantum wells. The possible corresponding shape and εxx strain profiles in the indium rich clusters (right) hint at a concentration close to pure InN in their core. The paper by Pierre Ruterana et al.  was presented at the 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004), held in Gyeongju, Korea, 15–19 March 2004.
Further papers from ISBLLED-2004 are published in phys. stat. sol. (a) 201, No. 12 (2004) and phys. stat. sol. (c) 1, No. 10 (2004).