physica status solidi (b)
Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1521-3951
Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction
The cover picture from the article  depicts the geometry of X-ray diffraction on a GaN/sapphire structure made by a two-step epitaxial lateral overgrowth (2S-ELO) process. Below, the X-ray rocking curve as a function of the vertical beam position in 2S-ELO GaN/sapphire is shown. A low intensity line diverging from the main peak position (arrow) may be interpreted as the disappearance of a winged crystal region due to dislocation curvature.
This paper is a presentation from the 6th International Conference on Nitride Semiconductors held in Bremen, Germany, in 2005. Further articles from ICNS-6 are also being published in phys. stat. sol. (a) 203, No. 7 (2006) and phys. stat. sol. (c) 3, No. 6 (2006).