physica status solidi (b)

Cover image for Vol. 253 Issue 2

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1521-3951

Associated Title(s): physica status solidi (a), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

244_05/2007Homoepitaxy of ZnO: from the substrates to doping

The cover of the current issue shows the appearance of terrace structures with monoatomic step heights of a pre-treated ZnO single crystal substrate. The picture relates to the article by C. Neumann et al. [1] and presents the results of homoepitaxial growth of ZnO films with the main focus on the ZnO substrate surface preparation in order to reach high quality two-dimensional growth. This work was presented at Symposium F of the 2006 E-MRS Fall Meeting in Warsaw, Poland, 4–8 September 2006.

The research group of Bruno K. Meyer, 1st Physics Institute of the Justus Liebig University at Gießen, Germany, has ongoing activities in the study of excitonic and defect related properties in wide band gap semiconductors supported by the in-house-growth by chemical vapor and sputter deposition of new, functional oxide semiconductors.

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