physica status solidi (b)
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1521-3951
Homoepitaxy of ZnO: from the substrates to doping
The cover of the current issue shows the appearance of terrace structures with monoatomic step heights of a pre-treated ZnO single crystal substrate. The picture relates to the article by C. Neumann et al.  and presents the results of homoepitaxial growth of ZnO films with the main focus on the ZnO substrate surface preparation in order to reach high quality two-dimensional growth. This work was presented at Symposium F of the 2006 E-MRS Fall Meeting in Warsaw, Poland, 4–8 September 2006.
The research group of Bruno K. Meyer, 1st Physics Institute of the Justus Liebig University at Gießen, Germany, has ongoing activities in the study of excitonic and defect related properties in wide band gap semiconductors supported by the in-house-growth by chemical vapor and sputter deposition of new, functional oxide semiconductors.