physica status solidi (b)
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1521-3951
Front Cover (Phys. Status Solidi B 9/2010)
The implementation of detailed surface kinetic mechanisms describing the thin film growth dynamics, into models of chemical vapor deposition reactors has been a challenge for many years. In their Feature Article on pp. 2127–2146, Barbato and Cavallotti review the literature concerning the study of the Si(100)2×1 surface dynamics and introduce a multiscale model that captures the main features of its reactivity. The model combines the results of ab initio calculations with an atomistic description of the Si surface, obtained using a 3D KMC model that explicitly accounts for the 2×1 surface reconstruction and the formation and diffusion of Si dimers on a hydrogenated surface.