physica status solidi (b)
Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1521-3951
Front Cover: Physics of nitride-based nanostructured light-emitting devices (Phys. Status Solidi B 8/2011)
In a series of 12 articles, the physics of nitride-based nanostructured light-emitting devices is presented in this issue. Some of the topics are illustrated on the cover: The use of a tight-binding model in combination with many-particle methods to calculate absorption and gain spectra of nitridebased quantum-dot (QD) systems is discussed by Seebeck et al. (pp. 1871–1878), one illustration of their results is the non-parabolic dispersion of electrons in an InGaN wetting layer (upper left graph). The surface morphology of GaN and InGaN layers, shown in the upper right graph, is the topic of the article by Falta et al. (pp. 1800–1809). Figge et al. (pp. 1765–1776) report on the realization of InGaN QD based LEDs for operation from the blue to amber spectral region (picture on the lower left). Furthermore, the creation of monolithic GaN-based airpost pillar microcavities (MCs) with embedded InGaN QDs is discussed (lower right graph) with respect to their epitaxial fabrication (Kruse et al., pp. 1748–1755) and their optical properties (Sebald et al., pp. 1756–1764). The detected mode spectra are compared with calculations by Florian et al. (pp. 1867–1870).