physica status solidi (b)
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1521-3951
Back Cover: Significantly different contamination of atomically clean Si(001) when investigated by XPS and AES (Phys. Status Solidi B 8/2011)
Recently, the c(4 × 2) reconstruction of the technologically highly important Si(001) surface was evidenced at low temperatures (below 200 K). High-resolution X-ray photoelectron spectroscopy (XPS) revealed a wide variety of surface states, whereas a study by scanning tunneling microscopy (STM) of the in situ oxidation in ultrahigh vacuum (UHV) revealed the high reactivity of the step edges. However, to date no in situ survey of the contamination of ultraclean Si(001) was published by using the standard methods in surface science: XPS and Auger electron spectroscopy (AES), although it was recognised that the electron beam may strongly affect the surface reconstruction in low energy electron diffraction (LEED) experiments. Teodorescu et al. (pp. 1919–1924) present a comparative survey of the in situ contamination of atomically clean Si(001) followed by AES and XPS. The cover images show LEED patterns obtained for clean Si(001) immediately after preparation (top row) and after a 6-hours investigation by AES and a short RHEED analysis (bottom row).