physica status solidi (b)

Cover image for Vol. 254 Issue 11

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1521-3951

Associated Title(s): physica status solidi (a), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

249_03b/2012Back Cover: Lateral charge carrier diffusion in InGaN quantum wells. Status Solidi B 3/2012)

In order to investigate a further aspect of the charge carrier dynamics in InGaN based LED structures, Julia Danhof et al. (pp. 480–484) measured the lateral charge carrier diffusion in light emitting quantum well structures. They found that there is indeed lateral movement of charge carriers on a micrometer length scale in InGaN/GaN quantum wells which was not clear a priori. It was demonstrated that the main mechanism behind the lateral charge carrier motion is diffusion, while the influence of drift due to in-plane internal electrical fields is negligible. In this work the charge carrier diffusion constant was determined for two samples emitting light at different wavelengths. The difference of a factor five in the diffusion constant is due to variation of the material quality.

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