Crystal Research and Technology

Cover image for Vol. 49 Issue 9

Editor: Wolfgang Neumann (Editor-in-Chief), Klaus-W. Benz (Consulting Editor)

Online ISSN: 1521-4079

Associated Title(s): physica status solidi (a), physica status solidi (b), physica status solidi (RRL) - Rapid Research Letters

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  • Current Issue:September 2014

    Volume 49, Issue 9

    Special Issue: Advances in Structural and Chemical...

  • August 2014

    Volume 49, Issue 8

    Special Issue: Italian Crystal Growth Conference 2...

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    Volume 49, Issue 7

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    Volume 49, Issue 6

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    Volume 49, Issue 5

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Volume 49, Issue 1New Cover design and article layouts

From the first issue of 2014 Crystal Research & Technology gets a make-over with new logo, full-page covers and modern article layouts. Take a look at the free-to-read January issue of the journal for the details: http://goo.gl/iCRdmh

Don’t forget to try the new Enhanced Article to comfortably read the articles online!

Recently Published Articles

  1. Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X-ray in situ visualization and advanced doping

    Peter Wellmann, Georg Neubauer, Lars Fahlbusch, Michael Salamon and Norman Uhlmann

    Article first published online: 19 SEP 2014 | DOI: 10.1002/crat.201400216

    Thumbnail image of graphical abstract

    The paper reviews the physical vapor transport growth method of silicon carbide as applied today. Special emphasis is put on in situ growth monitoring tools based on 2 D and 3 D X-ray imaging that could be a tool for production monitoring. These techniques allow a precise determination of the crystal and source material evolution. Another topic will be the processing of highly conductive p-type 4 H-SiC which is of particular interest for power electronic switches.

  2. Three-dimensional flow in a thin annular layer of silicon melt with bidirectional temperature gradients

    Fei Wang, Lan Peng and QuanZhuang Zhang

    Article first published online: 17 SEP 2014 | DOI: 10.1002/crat.201400212

    Thumbnail image of graphical abstract

    The Marangoni-thermocapillary flow of silicon melt with bidirectional temperature gradients is investigated. When changing q, the melt presents different state evolutions at different ΔT. Two critical q are found. Both of the critical heat fluxes decrease with increasing ΔT. q contributes more to the melt temperature while ΔT contributes more to the melt instability. The melt on the free surface flows mainly along the radial direction.

  3. You have free access to this content
    Editorial (pages 635–636)

    Peter Moeck and Andreas Holzenburg

    Article first published online: 11 SEP 2014 | DOI: 10.1002/crat.201470021

  4. Symmetries of migration-related segments of all [001] coincidence site lattice tilt boundaries in (001) projection for all holohedral cubic materials (pages 708–720)

    Peter Moeck, Bryant W. York and Nigel D. Browning

    Article first published online: 11 SEP 2014 | DOI: 10.1002/crat.201400071

    Thumbnail image of graphical abstract

    The symmetries of migration related segments of coincidence site lattice boundaries are derived for projections along their [001] tilt axis in grain boundaries of crystalline materials that possess the cubic holohedral point symmetry. Our predictions utilize bicrystallography in two dimensions, are confirmed visually by translation averaged atomic-resolution Z-contrast scanning transmission electron micro-scope images of Σ 13a tilt boundary segments in SrTiO3, and are applicable to all cubic materials that crystallize with point symmetry inline image in primitive as well as body- and face-centered cubic lattices.

  5. Crystal growth of sapphire for substrates for high-brightness, light emitting diodes

    Frank J. Bruni

    Article first published online: 11 SEP 2014 | DOI: 10.1002/crat.201400230

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    Sapphire has emerged as the preferred substrate for high-brightness, light emitting diodes (HB-LEDs) made with a GaN epilayer. A wide range of processes are employed for sapphire growth. These include Czochralski, Kyropoulos, Edge-defined, Film-fed Growth, Bagdasarov, classical Bridgman and several variants of Bridgman. This paper reviews the major growth processes and notes that facet formation on curved interfaces may still be a rate-limiting issue for melt grown crystals.

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