Crystal Research and Technology

Cover image for Vol. 49 Issue 7

Editor: Wolfgang Neumann (Editor-in-Chief), Klaus-W. Benz (Consulting Editor)

Online ISSN: 1521-4079

Associated Title(s): physica status solidi (a), physica status solidi (b), physica status solidi (RRL) - Rapid Research Letters

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Volume 49, Issue 1New Cover design and article layouts

From the first issue of 2014 Crystal Research & Technology gets a make-over with new logo, full-page covers and modern article layouts. Take a look at the free-to-read January issue of the journal for the details:

Don’t forget to try the new Enhanced Article to comfortably read the articles online!

Recently Published Articles

  1. Crystallization rate control for alkali halide crystal growth by the VGF technique with a skull layer

    V. I. Taranyuk, A. V. Gektin and A. V. Kolesnikov

    Article first published online: 24 JUL 2014 | DOI: 10.1002/crat.201400132

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    This work is devoted to an ability to use the melt level control for stabilization of crystallization rate during crystal growth by VGF technique with the skull layer. The electrocontact melt level gauge was used for 250×180×45 mm NaI crystal growth. It allows to fix crystallization rate and sustain this value during whole growth cycle due to the temperature gradient modification during the growth process.

  2. Selective growth of InAs quantum dots on GaAs driven by as kinetics

    R. Magri, E. Placidi, F. Arciprete and F. Patella

    Article first published online: 22 JUL 2014 | DOI: 10.1002/crat.201300426

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    In ACS Nano 7, 3868 (2013) we showed a selective growth of InAs Quantum Dots entirely due to the As component, usually believed having a minor role in the dot growth. In this paper we examine how the As flux direction and intensity influences the selective growth of InAs quantum dots and, through experiment and rate equations, find that the effect originates only from the small As flux gradient between the mound slopes and is not influenced substantially by the flux intensity.

  3. Properties of ZnO nanorods grown by hydrothermal synthesis on conductive layers

    L.V. Podrezova, V. Cauda, S. Stassi, G. Cicero, Kh. A. Abdullin and B. E. Alpysbaeva

    Article first published online: 9 JUL 2014 | DOI: 10.1002/crat.201300372

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    Zinc oxide nanorods were hydrothermally grown from water solution on different conductive substrates. In particular, several metal layers, such as Cu, Ni, Pt, Ag, Au, deposited on silicon substrates, and F-doped SnO2 coated-glass wafers were investigated as bottom electrodes and their influence on the properties of the synthesized nanorods were studied. The samples were characterized by scanning electron microscopy, X-ray diffraction, atomic force microscopy, current - voltage and photoluminescence measurements.

  4. Controllable vapor phase growth of vertically aligned ZnO nanorods on TCO/Glass substrates

    Sathish Chander Dhanabalan, John Paul Garcia, Davide Calestani, Francesco Pattini, F. Bissoli, Marco Villani, Stefano Rampino and Andrea Zappettini

    Article first published online: 3 JUL 2014 | DOI: 10.1002/crat.201300422

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    Solution-free and catalyst-free vertically aligned ZnO nanorods have been synthesized by thermal CVD reactor at relatively low temperature (< 500°C) to produce high-surface 3D photoanode on glass substrate. The study revealed that size and orientation of ZnO nanorods are mainly related to TCO's grain morphology and crystallinity, while their length can be controlled by varying Zn evaporation parameters.

  5. Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy

    Thomas Walther, Robert D. Richards and Faebian Bastiman

    Article first published online: 3 JUL 2014 | DOI: 10.1002/crat.201400157

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    Annular dark-field imaging in a scanning transmission electron microscope has been used to measure concentration profiles across thin Ga(As,Bi) layers, from which the segregation lengths for bismuth surface segregation have been calculated. Performing this for layers grown at two different temperatures, the activation energies for bismuth surface segregation have been determined for both interfaces. The upper (GaAs-on-GaAsBi) interface is wider but exhibits slightly higher activation energy for surface segregation.