Crystal Research and Technology

Cover image for Vol. 49 Issue 9

Editor: Wolfgang Neumann (Editor-in-Chief), Klaus-W. Benz (Consulting Editor)

Online ISSN: 1521-4079

Associated Title(s): physica status solidi (a), physica status solidi (b), physica status solidi (RRL) - Rapid Research Letters

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  • Current Issue:September 2014

    Volume 49, Issue 9

    Special Issue: Advances in Structural and Chemical...

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Volume 49, Issue 1New Cover design and article layouts

From the first issue of 2014 Crystal Research & Technology gets a make-over with new logo, full-page covers and modern article layouts. Take a look at the free-to-read January issue of the journal for the details: http://goo.gl/iCRdmh

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Recently Published Articles

  1. You have free access to this content
    Editorial (pages 635–636)

    Peter Moeck and Andreas Holzenburg

    Article first published online: 11 SEP 2014 | DOI: 10.1002/crat.201470021

  2. Symmetries of migration-related segments of all [001] coincidence site lattice tilt boundaries in (001) projection for all holohedral cubic materials (pages 708–720)

    Peter Moeck, Bryant W. York and Nigel D. Browning

    Article first published online: 11 SEP 2014 | DOI: 10.1002/crat.201400071

    Thumbnail image of graphical abstract

    The symmetries of migration related segments of coincidence site lattice boundaries are derived for projections along their [001] tilt axis in grain boundaries of crystalline materials that possess the cubic holohedral point symmetry. Our predictions utilize bicrystallography in two dimensions, are confirmed visually by translation averaged atomic-resolution Z-contrast scanning transmission electron micro-scope images of Σ 13a tilt boundary segments in SrTiO3, and are applicable to all cubic materials that crystallize with point symmetry inline image in primitive as well as body- and face-centered cubic lattices.

  3. Crystal growth of sapphire for substrates for high-brightness, light emitting diodes

    Frank J. Bruni

    Article first published online: 11 SEP 2014 | DOI: 10.1002/crat.201400230

    Thumbnail image of graphical abstract

    Sapphire has emerged as the preferred substrate for high-brightness, light emitting diodes (HB-LEDs) made with a GaN epilayer. A wide range of processes are employed for sapphire growth. These include Czochralski, Kyropoulos, Edge-defined, Film-fed Growth, Bagdasarov, classical Bridgman and several variants of Bridgman. This paper reviews the major growth processes and notes that facet formation on curved interfaces may still be a rate-limiting issue for melt grown crystals.

  4. Synthesis of PdO-ZnO mixed oxide precursors for PdZn intermetallic catalysts (pages 699–707)

    Jonathan Paiz, James Fitch, Eric Peterson, Tyler Hough, Werner Barnard and Abhaya Datye

    Article first published online: 11 SEP 2014 | DOI: 10.1002/crat.201400070

    Thumbnail image of graphical abstract

    Pd and Zn nitrates were aerosolized to produce droplets that were heated in air to form mixed Pd, Zn oxides. This method yields powders of uniform composition and allows study via XRD, TEM, Raman and XAS. We found that Pd+2 can be isomorphously substituted into hexagonal ZnO and Zn+2 can also be substituted within tetragonal PdO. These mixed oxides serve as precursors to form well defined PdPd-Zn intermetallic phases.

  5. Synthesis and characterization of Cu2ZnSnSe4 nanocrystals prepared by one pot route

    Tingting Wang, Qinmiao Chen, Jin Chen, Fangfang Zhou, Zhen Jia, Xiaoming Dou and Songlin Zhuang

    Article first published online: 9 SEP 2014 | DOI: 10.1002/crat.201400167

    Thumbnail image of graphical abstract

    Quaternary Cu2ZnSnSe4 nanocrystals have-been synthesized by an easy and fast one pot method for the first time. The NCs present as tetragonal phase. The (112) plane interplanar spacing is 0.328 nm. The NCs are spherical shape with crystal domain size of 10 nm. The band gap energy of the NCs is about 1.44 eV, which could be optimal for photovoltaic applications.

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