Crystal Research and Technology

Cover image for Vol. 49 Issue 4

Editor: Wolfgang Neumann (Editor-in-Chief), Klaus-W. Benz (Consulting Editor)

Online ISSN: 1521-4079

Associated Title(s): physica status solidi (a), physica status solidi (b), physica status solidi (RRL) - Rapid Research Letters

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Volume 49, Issue 1New Cover design and article layouts

From the first issue of 2014 Crystal Research & Technology gets a make-over with new logo, full-page covers and modern article layouts. Take a look at the free-to-read January issue of the journal for the details: http://goo.gl/iCRdmh

Don’t forget to try the new Enhanced Article to comfortably read the articles online!

Recently Published Articles

  1. Synthesis of bamboo-like SiC whiskers from waste silica fume

    Qingcui Li, Chang-An Wang and Shengnian Tie

    Article first published online: 22 APR 2014 | DOI: 10.1002/crat.201300340

    Thumbnail image of graphical abstract

    Silicon carbide (SiC) whiskers with several dozens of microns length and a bamboo-like morphology have been successfully synthesized by a carbothermal reduction process using purified silica fume as silicon source.

  2. Preparation of hollow dipyramid TiO2 with truncated structure using an oxidation/etch method and its gas-sensing properties

    Fei Huang, Ai-Hua Yan, Zheng-Yi Fu, Fan Zhang, Yue-Hua Wang, Shi-Bin Yin and Ying-Huai Qiang

    Article first published online: 11 APR 2014 | DOI: 10.1002/crat.201400017

    Thumbnail image of graphical abstract

    Hollow dipyramid titanium dioxide with truncated structure was synthesized by a facile hydrothermal approach in an aqueous solution of hydrofluoric acid and hydrogen peroxide. Raman spectrum shows that the main phase is anatase titanium dioxide, accompanied by small amount of rutile titanium dioxide. Sensing properties show that the desirable sensing characteristics with a sensitivity of about 2.1 towards 5 ppm ethanol gas at 200 oC could be obtained.

  3. Epitaxial growth of thin TiO2 films on the Au covered Fe(100) surface

    A. Brambilla, A. Calloni, G. Berti, G. Bussetti, L. Duò and F. Ciccacci

    Article first published online: 11 APR 2014 | DOI: 10.1002/crat.201300416

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    In this work, we investigate the possibility of growing high-quality TiO2 thin films on Fe(100) by intercalating a thin Au buffer layer. X-ray Photoemission Spectroscopy and Low Energy Electron Diffraction are employed to investigate the electronic and structural properties of the TiO2/Au/Fe interfaces. We obtain crystalline rutile films with a reduced number of defects when compared to room temperature grown TiO2/Fe(100) samples but with some degree of interface mixing.

  4. Synthesis and growth mechanism of ZnO rod-like nanostructures by a microwave-assisted low-temperature aqueous solution route

    Qiang Li, Wenbo Cao, Jun Lei, Xuelei Zhao, Tiecui Hou, Bingbing Fan, Deliang Chen, Liwei Zhang, Hailong Wang, Hongliang Xu, Rui Zhang and Hongxia Lu

    Article first published online: 11 APR 2014 | DOI: 10.1002/crat.201300355

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    ZnO nanoarray was synthesized through microwave-assisted low-temperature aqueous solution route using Zn(NO3)2 and HMTA as raw materials, and using FTO glass as substrate. Results indicated that high density ZnO regular nanorods of 200 nm in diameter were obtained when the concentration of mixed solution was 0.05M, reaction temperature was 95 °C, and reaction time was 4h. Possible mechanism of different synthesis method and the influence of microwave processing were proposed.

  5. Nanoindentation studies of gallium arsenide heteroepitaxial layers

    J. S. Ponraj, G. Attolini, M. Bosi and A. Dakshinamoorthy

    Article first published online: 4 APR 2014 | DOI: 10.1002/crat.201300405

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    Gallium arsenide epilayers were deposited by horizontal home-made metal organic chemical vapor phase epitaxy, at a temperature of 600 °C over germanium substrates with different III/V ratio. Nanomechanical properties of grown samples were studied with nanoindentation using Berkovich and Vickers indenters, hardness and elastic modulus values have been determined. The defects induced phenomena due to the change in load on GaAs/Ge epilayers have been elucidated.

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