Crystal Research and Technology

Cover image for Vol. 52 Issue 1

Editor: Wolfgang Neumann (Editor-in-Chief), Klaus-W. Benz (Consulting Editor)

Online ISSN: 1521-4079

Associated Title(s): physica status solidi (a), physica status solidi (b), physica status solidi (RRL) - Rapid Research Letters

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Recently Published Articles

  1. The mechanism of texture formation during crystallization process of Ge2Sb2Te5 thin films

    Qixun Yin and Leng Chen

    Version of Record online: 19 JAN 2017 | DOI: 10.1002/crat.201600243

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    The texture evolution, orientation relationship and grain growth mode of Ge2Sb2Te5 thin films in crystallization process has been investigated experimentally and theoretically. The results show that the major texture component of Ge2Sb2Te5 thin films found in FCC structure is {100} fibre texture and in HEX structure is {0001} basal texture. The dependence of strain energy density on grain orientation in Ge2Sb2Te5 thin films has also been discussed.

  2. Melt crystallization of binary mixture of fatty acids as model biofuel

    Takuji Yamamoto, Takuto Fujikawa, Nobuyoshi Okamoto, Kazuhiro Itoh, Kouji Maeda, Keisuke Fukui and Hidetoshi Kuramochi

    Version of Record online: 12 JAN 2017 | DOI: 10.1002/crat.201600316

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    The authors performed melt crystallization experiments by employing a binary mixture of fatty acids as a model biofuel. To account for both the growth of solid layer and the solute distribution at the solid–liquid (S–L) interface during the formation of the solid layer, this article proposed theoretical equations involving heat and mass transfer. As a result, authors confirmed the validity of the proposed equations under the varied crystallization conditions.

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    Growth of crystalline semiconductor structures on amorphous substrates for photovoltaic applications

    T. Boeck, F. Ringleb and R. Bansen

    Version of Record online: 10 JAN 2017 | DOI: 10.1002/crat.201600239

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    The growth of defined crystalline structures on amorphous materials is an almost generally difficult task. Due to the lack of a crystallographic lattice, no epitaxial intergrowth can be realized. However, for many applications the growth of crystalline layers or microstructures on such substrates is required. For large area devices such as solar cells, locally selective seeding of silicon or chalcopyrite on glass is a promising method.

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    Sputtering and amorphization of crystalline semiconductors by Nanodroplet Bombardment

    Enric Grustan-Gutierrez, Chuqi Wei, Bingru Wang and Mario Lanza

    Version of Record online: 10 JAN 2017 | DOI: 10.1002/crat.201600240

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    Nanodroplet bombardment (NB) is a method for physical sputtering with very high fast speed, and that can etch even the hardest materials, such as SiC. For these reasons, the NB technique can be very interesting for the fabrication of next generation MEMS and NEMS, using advanced materials. This paper makes a short review of the NB technique, and presents its impact on different materials surfaces, with special emphasis on the amorphization of Silicon.

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