Crystal Research and Technology
Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Wolfgang Neumann (Editor-in-Chief), Klaus-W. Benz (Consulting Editor)
Online ISSN: 1521-4079
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Recently Published Articles
- Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X-ray in situ visualization and advanced doping
Peter Wellmann, Georg Neubauer, Lars Fahlbusch, Michael Salamon and Norman Uhlmann
Article first published online: 19 SEP 2014 | DOI: 10.1002/crat.201400216
The paper reviews the physical vapor transport growth method of silicon carbide as applied today. Special emphasis is put on in situ growth monitoring tools based on 2 D and 3 D X-ray imaging that could be a tool for production monitoring. These techniques allow a precise determination of the crystal and source material evolution. Another topic will be the processing of highly conductive p-type 4 H-SiC which is of particular interest for power electronic switches.
- Three-dimensional flow in a thin annular layer of silicon melt with bidirectional temperature gradients
Fei Wang, Lan Peng and QuanZhuang Zhang
Article first published online: 17 SEP 2014 | DOI: 10.1002/crat.201400212
The Marangoni-thermocapillary flow of silicon melt with bidirectional temperature gradients is investigated. When changing q, the melt presents different state evolutions at different ΔT. Two critical q are found. Both of the critical heat fluxes decrease with increasing ΔT. q contributes more to the melt temperature while ΔT contributes more to the melt instability. The melt on the free surface flows mainly along the radial direction.
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- Symmetries of migration-related segments of all  coincidence site lattice tilt boundaries in (001) projection for all holohedral cubic materials (pages 708–720)
Peter Moeck, Bryant W. York and Nigel D. Browning
Article first published online: 11 SEP 2014 | DOI: 10.1002/crat.201400071
The symmetries of migration related segments of coincidence site lattice boundaries are derived for projections along their  tilt axis in grain boundaries of crystalline materials that possess the cubic holohedral point symmetry. Our predictions utilize bicrystallography in two dimensions, are confirmed visually by translation averaged atomic-resolution Z-contrast scanning transmission electron micro-scope images of Σ 13a tilt boundary segments in SrTiO3, and are applicable to all cubic materials that crystallize with point symmetry in primitive as well as body- and face-centered cubic lattices.
- Crystal growth of sapphire for substrates for high-brightness, light emitting diodes
Frank J. Bruni
Article first published online: 11 SEP 2014 | DOI: 10.1002/crat.201400230
Sapphire has emerged as the preferred substrate for high-brightness, light emitting diodes (HB-LEDs) made with a GaN epilayer. A wide range of processes are employed for sapphire growth. These include Czochralski, Kyropoulos, Edge-defined, Film-fed Growth, Bagdasarov, classical Bridgman and several variants of Bridgman. This paper reviews the major growth processes and notes that facet formation on curved interfaces may still be a rate-limiting issue for melt grown crystals.