Crystal Research and Technology

Cover image for Vol. 49 Issue 8

Editor: Wolfgang Neumann (Editor-in-Chief), Klaus-W. Benz (Consulting Editor)

Online ISSN: 1521-4079

Associated Title(s): physica status solidi (a), physica status solidi (b), physica status solidi (RRL) - Rapid Research Letters

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Volume 49, Issue 1New Cover design and article layouts

From the first issue of 2014 Crystal Research & Technology gets a make-over with new logo, full-page covers and modern article layouts. Take a look at the free-to-read January issue of the journal for the details: http://goo.gl/iCRdmh

Don’t forget to try the new Enhanced Article to comfortably read the articles online!

Recently Published Articles

  1. Guest Editors’ Preface (pages 533–534)

    Paola Prete and Andrea Zappettini

    Article first published online: 19 AUG 2014 | DOI: 10.1002/crat.201420018

  2. Electroless gold patterning of CdZnTe crystals for radiation detection by scanning pipette technique (pages 535–539)

    N. Zambelli, G. Benassi, E. Gombia, M. Zanichelli and D. Calestani

    Article first published online: 19 AUG 2014 | DOI: 10.1002/crat.201300415

    Thumbnail image of graphical abstract

    Recently a new technique to deposit contacts on CZT detectors that combines standard electroless procedure and scanning pipette technique was proposed. This work shows that by using a micro-pipette is possible to deposit gold dots, pixels and micro-stripes without using photolithographic process. Moreover, it shows that performances, in terms of charge collection efficiency and energy resolution, of detectors prepared with this technique are similar to the ones prepared with standard procedure.

  3. Preliminary design of a novel high throughput CVD reactor for photovoltaic applications (pages 614–619)

    Maurizio Masi, Carlo Cavallotti, Diego Boccalari and Francesco Castellana

    Article first published online: 19 AUG 2014 | DOI: 10.1002/crat.201300391

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    The computational design of a high throughput chemical vapor deposition reactor to deposit silicon films is here presented. The reactor is characterized by a multichannel hot wall structure, atmospheric operation, and an alternated feeding of reactants from the two reactor sides to ensure the maximum consumption of precursors while keeping an acceptable film thickness uniformity.

  4. Effect of Mn doping on the growth and properties of enstatite single crystals

    Manuela Catalano, Andrea Bloise, Valentino Pingitore, Domenico Miriello, Enzo Cazzanelli, Marco Giarola, Gino Mariotto and Eugenio Barrese

    Article first published online: 19 AUG 2014 | DOI: 10.1002/crat.201400102

    Thumbnail image of graphical abstract

    Millimetric Mn-doped enstatite single crystals have been prepared using slow cooling flux method in the temperature range 600-1350°C with lithium-vanadiummolybdate as melting agent. The influence of manganese on the growth and some properties (luminescence) were assessed. Mn-doped single enstatite crystals are well developed, chemically homogeneous and with maximum size of 8.5 mm in length. These synthetic Mn-doped enstatite crystals may have potential for possible technological uses in novel applications.

  5. Phase field investigation on sidebranching dynamics in transient growth

    Wenjian Zheng, Zhibo Dong, Yanhong Wei and Yong Wang

    Article first published online: 18 AUG 2014 | DOI: 10.1002/crat.201400119

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    This paper extends the sidebranching dynamics of steady growth to the transient state growth with constant variations of control conditions by using phase field simulations. The results show that due to the influences of tip shape and tip velocity, the sidebranch characteristics during the directional solidification under the transient growth are different with that under steady-state conditions.

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