Crystal Research and Technology
Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Wolfgang Neumann (Editor-in-Chief), Klaus-W. Benz (Consulting Editor)
Online ISSN: 1521-4079
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Recently Published Articles
- Selective reading of stored information in RE doped aluminium perovskites
D. Chiriu, C.M. Carbonaro, R. Corpino, L. Stagi and P.C. Ricci
Article first published online: 25 SEP 2014 | DOI: 10.1002/crat.201400158
We focus on the possibility to control and use carrier traps to engineer new devices for optical memory storage by using rare earths doped aluminium perovskites . In this perspective, the optical and structural characterizations are presented and the effects of visible irradiation on the thermoluminescence measurements are discussed. Three trap levels are observed and the selective effects of red, blue and deep blue irradiation show the feasibility in the near future of new promising transparent displays.
- Undercooling measurement and nucleation study of silicon droplet solidification
M.G. Tsoutsouva, T. Duffar, C. Garnier and G. Fournier
Article first published online: 23 SEP 2014 | DOI: 10.1002/crat.201400165
An experimental setup has been designed and developed for the study of nucleation phenomena, where a silicon droplet is directly placed, melted and solidified on a substrate. The melting-solidification process was filmed and the undercooling temperature was measured by monochromatic and bichromatic pyrometers. It was found that the nature of the material of the substrate plays a role on the solidification process and droplet formation. The figure illustrates the macroscopic top/side views of solidified silicon droplets on fused silica and zyarock substrates.
- Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X-ray in situ visualization and advanced doping
Peter Wellmann, Georg Neubauer, Lars Fahlbusch, Michael Salamon and Norman Uhlmann
Article first published online: 19 SEP 2014 | DOI: 10.1002/crat.201400216
The paper reviews the physical vapor transport growth method of silicon carbide as applied today. Special emphasis is put on in situ growth monitoring tools based on 2 D and 3 D X-ray imaging that could be a tool for production monitoring. These techniques allow a precise determination of the crystal and source material evolution. Another topic will be the processing of highly conductive p-type 4 H-SiC which is of particular interest for power electronic switches.
- Three-dimensional flow in a thin annular layer of silicon melt with bidirectional temperature gradients
Fei Wang, Lan Peng and QuanZhuang Zhang
Article first published online: 17 SEP 2014 | DOI: 10.1002/crat.201400212
The Marangoni-thermocapillary flow of silicon melt with bidirectional temperature gradients is investigated. When changing q, the melt presents different state evolutions at different ΔT. Two critical q are found. Both of the critical heat fluxes decrease with increasing ΔT. q contributes more to the melt temperature while ΔT contributes more to the melt instability. The melt on the free surface flows mainly along the radial direction.
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