Crystal Research and Technology

Cover image for Vol. 49 Issue 9

Editor: Wolfgang Neumann (Editor-in-Chief), Klaus-W. Benz (Consulting Editor)

Online ISSN: 1521-4079

Associated Title(s): physica status solidi (a), physica status solidi (b), physica status solidi (RRL) - Rapid Research Letters

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  • Current Issue:September 2014

    Volume 49, Issue 9

    Special Issue: Advances in Structural and Chemical...

  • August 2014

    Volume 49, Issue 8

    Special Issue: Italian Crystal Growth Conference 2...

  • July 2014

    Volume 49, Issue 7

  • June 2014

    Volume 49, Issue 6

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    Volume 49, Issue 5

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Volume 49, Issue 1New Cover design and article layouts

From the first issue of 2014 Crystal Research & Technology gets a make-over with new logo, full-page covers and modern article layouts. Take a look at the free-to-read January issue of the journal for the details: http://goo.gl/iCRdmh

Don’t forget to try the new Enhanced Article to comfortably read the articles online!

Recently Published Articles

  1. Selective reading of stored information in RE doped aluminium perovskites

    D. Chiriu, C.M. Carbonaro, R. Corpino, L. Stagi and P.C. Ricci

    Article first published online: 25 SEP 2014 | DOI: 10.1002/crat.201400158

    Thumbnail image of graphical abstract

    We focus on the possibility to control and use carrier traps to engineer new devices for optical memory storage by using rare earths doped aluminium perovskites . In this perspective, the optical and structural characterizations are presented and the effects of visible irradiation on the thermoluminescence measurements are discussed. Three trap levels are observed and the selective effects of red, blue and deep blue irradiation show the feasibility in the near future of new promising transparent displays.

  2. Undercooling measurement and nucleation study of silicon droplet solidification

    M.G. Tsoutsouva, T. Duffar, C. Garnier and G. Fournier

    Article first published online: 23 SEP 2014 | DOI: 10.1002/crat.201400165

    Thumbnail image of graphical abstract

    An experimental setup has been designed and developed for the study of nucleation phenomena, where a silicon droplet is directly placed, melted and solidified on a substrate. The melting-solidification process was filmed and the undercooling temperature was measured by monochromatic and bichromatic pyrometers. It was found that the nature of the material of the substrate plays a role on the solidification process and droplet formation. The figure illustrates the macroscopic top/side views of solidified silicon droplets on fused silica and zyarock substrates.

  3. Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X-ray in situ visualization and advanced doping

    Peter Wellmann, Georg Neubauer, Lars Fahlbusch, Michael Salamon and Norman Uhlmann

    Article first published online: 19 SEP 2014 | DOI: 10.1002/crat.201400216

    Thumbnail image of graphical abstract

    The paper reviews the physical vapor transport growth method of silicon carbide as applied today. Special emphasis is put on in situ growth monitoring tools based on 2 D and 3 D X-ray imaging that could be a tool for production monitoring. These techniques allow a precise determination of the crystal and source material evolution. Another topic will be the processing of highly conductive p-type 4 H-SiC which is of particular interest for power electronic switches.

  4. Three-dimensional flow in a thin annular layer of silicon melt with bidirectional temperature gradients

    Fei Wang, Lan Peng and QuanZhuang Zhang

    Article first published online: 17 SEP 2014 | DOI: 10.1002/crat.201400212

    Thumbnail image of graphical abstract

    The Marangoni-thermocapillary flow of silicon melt with bidirectional temperature gradients is investigated. When changing q, the melt presents different state evolutions at different ΔT. Two critical q are found. Both of the critical heat fluxes decrease with increasing ΔT. q contributes more to the melt temperature while ΔT contributes more to the melt instability. The melt on the free surface flows mainly along the radial direction.

  5. You have free access to this content
    Editorial (pages 635–636)

    Peter Moeck and Andreas Holzenburg

    Article first published online: 11 SEP 2014 | DOI: 10.1002/crat.201470021

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