Crystal Research and Technology
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Wolfgang Neumann (Editor-in-Chief), Klaus-W. Benz (Consulting Editor)
Online ISSN: 1521-4079
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Recently Published Articles
- Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination
Rahul Kumar and Dhrubes Biswas
Version of Record online: 23 NOV 2016 | DOI: 10.1002/crat.201600149
Crystallographic tilt and surface topography of the In(Al,Ga)As metamorphic buffers on GaAs (001) have been investigated. A novel tilt determination technique based on x-ray diffraction has been developed which can separate the effect of anisotropic strain. Tilt has been found to depend on compositional grading scheme, growth temperature and surface irregularities. Random surfaces, very high and very low growth temperatures have been found effective to reduce tilt.
- Substitution effects on ferroelectric, leakage current and anti-fatigue characteristic of Bi4-xSbxTi3O12 thin films
Zan Wang, Wei Jiang, San-xi Li and De-zhi Song
Version of Record online: 18 NOV 2016 | DOI: 10.1002/crat.201600073
Properties of Sb3+ substituted Bi4-xSbxTi3O12 thin films was significantly improved compared to pure Bi4Ti3O12 film. It was noted that the most suitable Bi3+/Sb3+ ratio is 3.96/0.04. When x = 0.04, the film Bi3.96Sb0.04Ti3O12 endures 35V high voltage and 2Pr value reaches 87μC/cm2; it shows fatigue endurance up to more than 1010 switching cycles; the leakage current density is as low as 8×10−8 A/cm2.
- Numerical design of Metal-Organic Vapour Phase Epitaxy process for gallium nitride epitaxial growth
J. Skibinski, P. Caban, T. Wejrzanowski, G.J. Oliver and K.J. Kurzydlowski
Version of Record online: 16 NOV 2016 | DOI: 10.1002/crat.201600265
The paper presents the results of numerical simulations and experimental measurements of the epitaxial growth of gallium nitride in Metal Organic Vapor Phase Epitaxy within a AIX-200∕4RF-S reactor. detailed 3D modeling has been used to get an overview of the influence of process parameters on the growth rate and crystal thickness distribution of gallium nitride.
- Thermal induced structural properties of silver(I) sulphate (Ag2SO4)
Helge B. Larsen, Gunnar Thorkildsen, David G. Nicholson and Philip Pattison
Version of Record online: 11 NOV 2016 | DOI: 10.1002/crat.201600173
Silver (I) sulphate, Ag2SO4, is a common chemical compound used in many contexts. Surprisingly, its high temperature structure and the corresponding properties have not been elucidated until now. By use of synchrotron radiation diffraction techniques, the (disordered) structure is here reported and an anisotropic colossal thermal expansion effect is documented. The spatial arrangements of the silver-atoms explain this behavior, and also the known high thermal conductivity.
- An experimental and CFD study on gas flow field distribution in the growth process of multi-walled carbon nanotube arrays by thermal chemical vapor deposition
Mingjie Li, Zhaopeng Xu, Zhaobin Li, Yan Chen, Jingwei Guo, Huimei Huo, Hangyu Zhou, Huichao Huangfu, Zehui Cao and Haiyan Wang
Version of Record online: 11 NOV 2016 | DOI: 10.1002/crat.201600104
Multi-walled carbon nanotube arrays grown on the central position are more aligned and longer than those on the bottom. A computational fluid dynamics model was employed to investigate the gas flow field impact on the Multi-walled carbon nanotube arrays growth. The results show that gas circulations appear after carrier gas and carbon source are injected into the quartz tube.