Crystal Research and Technology

Cover image for Vol. 50 Issue 5

Editor: Wolfgang Neumann (Editor-in-Chief), Klaus-W. Benz (Consulting Editor)

Online ISSN: 1521-4079

Associated Title(s): physica status solidi (a), physica status solidi (b), physica status solidi (RRL) - Rapid Research Letters

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Volume 49, Issue 1New Cover design and article layouts

From the first issue of 2014 Crystal Research & Technology gets a make-over with new logo, full-page covers and modern article layouts. Take a look at the free-to-read January issue of the journal for the details: http://goo.gl/iCRdmh

Don’t forget to try the new Enhanced Article to comfortably read the articles online!

Recently Published Articles

  1. Tracking atomic processes throughout the formation of heteroepitaxial interfaces

    Kurt Scheerschmidt and Oussama Moutanabbir

    Article first published online: 15 MAY 2015 | DOI: 10.1002/crat.201500061

    Thumbnail image of graphical abstract

    Molecular dynamics simulations of Ge-deposition onto Si-surfaces applying enhanced empirical interaction potentials describe, make visible and relate to experimental findings such processes as island and layer growth, defect and quantum dot generation.

  2. Synthesis of radial-like ZnO structure by hydrothermal method with ZnSO4·7H2O and Zn(CH3COO)2·2H2O as zinc sources (pages 414–419)

    Yongqian Wang, Jun Yang, Junhan Kong, Hanxiang Jia, Zhengshu Wang, Hongyun Jin and Meihua Yu

    Article first published online: 11 MAY 2015 | DOI: 10.1002/crat.201500037

    Thumbnail image of graphical abstract

    Figure a-d shows the representative FESEM images of ZnO structures grown by using ZnSO4·7H2O at low, medium and high magnifications, respectively. The low magnifications image in figure a shows the large quantity of such radial-like ZnO structures. The medium magnification in figure b clearly shows that there are two major structures.

  3. Synthesis, bulk growth, polarizability and nonlinear optical properties of γ-glycine single crystals (pages 389–394)

    K. Renuka Devi and K. Srinivasan

    Article first published online: 11 MAY 2015 | DOI: 10.1002/crat.201500001

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    Large dimensional single crystals of γ-glycine have been grown for the first time. γ-glycine nucleated in presence of malonic acid revealed highest SHG efficiency. Parallel head to tail alignment in the structure of γ-glycine leads to higher SHG efficiency. For first time analytical elucidation of optical parameters of γ-glycine is reported. Phase transition from γ to α-polymorph observed in DSC, confirms the type of polymorph.

  4. In-plane structure of ferecrystalline compounds

    Matthias Falmbigl, Matti B. Alemayehu, Devin R. Merrill, Matt Beekman and David C. Johnson

    Article first published online: 8 MAY 2015 | DOI: 10.1002/crat.201500019

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    A key characteristic of a ferecrystal is that the constituents in these intergrowth compounds exhibit independent in-plane crystal structures. The SnSe-layer in a variety of ferecrystalline compounds has a surprisingly large diversity in its structure, depending on the other constituent and its own thickness. Here we provide a detailed investigation of the in-plane structures of ferecrystalline compounds including the observation of reflections due to true 2D-symmetry.

  5. Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy

    Valentin Garbe, Barbara Abendroth, Hartmut Stöcker, Arkadi Gavrilov, Doron Cohen-Elias, Shlomo Mehari, Dan Ritter and Dirk C. Meyer

    Article first published online: 7 MAY 2015 | DOI: 10.1002/crat.201400468

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    Utilizing electrical, structural and optical methods, a doping model of an unintentionally doped n-GaN wafer was drawn up, containing two different GaN layers. The smooth GaN surface layer exhibits lower carrier concentration but higher mobility, while the bottom layer shows higher background carrier concentration and lower mobility, because of high impurity incorporation. Oxygen seems to be the donor, while substitutionally filling the positions of nitrogen vacancies, leading to n-doping.

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