Fast growth of thin multi-crystalline silicon ribbons by the RST method
Bertrand Heilbronn, Fabrice De Moro, Emilie Jolivet, Elsa Tupin, Benjamin Chau, Romain Varrot, Béatrice Drevet, Séverine Bailly, Delphine Rey, Hélène Lignier, Yinghao Xi, Thècle Riberi-Béridot, Nathalie Mangelinck-Noël, Guillaume Reinhart and Gabrielle Regula
Article first published online: 13 OCT 2014 | DOI: 10.1002/crat.201400213
The RST process is a ribbon direct-wafering technology with specific ability for thin multi-crystalline wafer production. Efficiency over 16% has been reached. Impurities, such as C and transition metals, need to be eliminated in the process. A model is proposed which shows that the carbon substrate is an important source of carbon contamination in the silicon melt. Experimental segregation studies conclude to a near-diffusive regime.