Advanced Materials

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Recently Published Articles

  1. Electronic Structure and Properties of Organic Bulk-Heterojunction Interfaces

    Robert A. Street

    Article first published online: 25 NOV 2015 | DOI: 10.1002/adma.201503162

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    The bulk heterojunction (BHJ) structure has enabled the creation of organic solar cells. The electronic structure of the BHJ is characterized by the phase morphology, molecular structure, and disorder. Exciton dissociation, carrier transport, and recombination each reflect the electronic structure of the BHJ interface. A broad physical understanding is emerging but important details remain unresolved.

  2. Nanostructured Photodetectors: From Ultraviolet to Terahertz

    Hongyu Chen, Hui Liu, Zhiming Zhang, Kai Hu and Xiaosheng Fang

    Article first published online: 25 NOV 2015 | DOI: 10.1002/adma.201503534

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    Nanostructured materials with different dimensions, such as nanolayers, nanowires, and quantum dots, exhibit excellent photoelectronic properties for photodetectors ranging from the ultraviolet to terahertz frequencies. Besides excellent performances of high sensitivity and fast response for practical applications, they also exhibit many appealing features like high density of integration and multifunction, in conjunction with traditional photodetectors.

  3. Stretchable Figures of Merit in Deformable Electronics

    Darren J. Lipomi

    Article first published online: 25 NOV 2015 | DOI: 10.1002/adma.201504196

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    Stretchable electronic systems accommodate strain in various ways—from the intrinsic mechanical properties, through composite structures, by the formation of cracks, or with other mechanisms—. This has produced some imprecision in the literature on what is meant by the term ‘stretchable.’

  4. Large Enhancement of Carrier Transport in Solution-Processed Field-Effect Transistors by Fluorinated Dielectric Engineering

    Dongyoon Khim, Yong Xu, Kang-Jun Baeg, Minji Kang, Won-Tae Park, Seung-Hoon Lee, In-Bok Kim, Juhwan Kim, Dong-Yu Kim, Chuan Liu and Yong-Young Noh

    Article first published online: 25 NOV 2015 | DOI: 10.1002/adma.201501967

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    The universal role of high-k fluorinated dielectrics in assisting the carrier transport in transistors for a broad range of printable semiconductor is explored. These results present general rules for how to design dielectric materials and achieve devices with a high carrier concentration, low disorder, reliable operation, and robust properties.

  5. Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

    Zhihao Yu, Zhun-Yong Ong, Yiming Pan, Yang Cui, Run Xin, Yi Shi, Baigeng Wang, Yun Wu, Tangsheng Chen, Yong-Wei Zhang, Gang Zhang and Xinran Wang

    Article first published online: 25 NOV 2015 | DOI: 10.1002/adma.201503033

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    By combining a high-κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room-temperature mobility of ≈150 cm2 V−1 s−1 and room-temperature phonon-limited transport in a monolayer MoS2 transistor for the first time.